<p>Electroplating is a core technology in high-end chip manufacturing, with its technical challenges centered on achieving void-free filling of metal coatings within micro- and nanoscale trenches and vias. Copper, the current mainstream interconnect material, can no longer meet the performance and reliability demands posed by the continuous reduction in interconnect dimensions. In contrast, cobalt offers superior electrical properties and safety at the micro-/nanoscale, making it a promising next-generation interconnect material to replace copper. This paper provides a comprehensive overview of cobalt interconnect technology in chip manufacturing. It examines the electrochemical behavior and interactions of cobalt ions, boric acid, and additives, summarizing the cobalt filling effects and associated mechanism models under different process compositions. The discussion also highlights advanced in situ electrochemical characterization technologies to investigate the synergistic and antagonistic effects of various plating bath components, the influence of pH, temperature, and additives on cobalt nucleation and growth, and the surface, interface, and filling processes during cobalt electrodeposition in micro-/nanostructures. Furthermore, the paper explores annealing treatments for cobalt coatings, emphasizing their role in optimizing performance.</p>