<p>Nanocrystalline Bi<sub>1−<i>x</i></sub>Gd<sub><i>x</i></sub>Fe<sub>1−<i>x</i></sub>Cr<sub><i>x</i></sub>O<sub>3</sub> (<i>x</i> = 0.00, 0.04, 0.08, 0.12, 0.16) samples were fabricated via sol–gel autocombustion. x-Ray diffraction analysis (XRD) confirmed a single-phase rhombohedral structure. Crystallite size ranged from 30&#xa0;nm to 25&#xa0;nm, emphasizing their nanoscale characteristics. The lower bulk density compared with the x-ray density indicated the presence of pores. Lattice constants were computed with Cell software, indicating that substituting Bi<sup>3+</sup> with the smaller Gd<sup>3+</sup> ions resulted in modifications to the lattice structure. Fourier-transform infrared (FTIR) spectra revealed absorption bands between 400 cm<sup>−1</sup> and 600&#xa0;cm<sup>−1</sup>, with shifts observed as the Gd concentration increased, signifying doping effects on the structure. A decrease in the frequencies of both <i>ν</i><sub>1</sub> and <i>ν</i><sub>2</sub> bands was observed, attributed to the disruption of the Fe<sup>3+</sup>–O<sup>2−</sup> bond and the rearrangement of cations due to Gd incorporation. Dielectric studies performed at room temperature within the 1–3&#xa0;GHz range revealed a decrease in both real and imaginary parts of permittivity as frequency increased, consistent with the Maxwell–Wagner polarization model. At higher frequencies, the alternating-current (AC) conductivity increases substantially owing to the contribution of grains and enhanced polarization at neighboring sites. The sample with <i>x</i> = 0.16 exhibited low dielectric losses of 0.21 GHz at 3&#xa0;GHz. The decrease in the quality factor is linked to a rise in loss caused by the formation of pores within the grains. Moreover, for <i>x</i> = 0.16, a reflection loss of −66.57&#xa0;dB was measured at 0.98&#xa0;GHz. These findings highlight the potential of these materials for cutting-edge uses, especially in multilayer chip inductors and high-frequency microwave systems.</p>

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Structural, Spectral, Dielectric, and Microwave Absorption Properties of Gd–Cr-Doped BiFeO3 Materials for High-Frequency Applications

  • Beriham Basha,
  • Salman Ahmad,
  • Ghulam Mustafa,
  • Shagufta Gulbadan,
  • Norah Salem Alsaiari,
  • Malik Tahir Mehmood,
  • Shaista Nargis,
  • Faseeh ur Raheem,
  • M. S. Al-Buriahi,
  • Muhammad Azhar Khan

摘要

Nanocrystalline Bi1−xGdxFe1−xCrxO3 (x = 0.00, 0.04, 0.08, 0.12, 0.16) samples were fabricated via sol–gel autocombustion. x-Ray diffraction analysis (XRD) confirmed a single-phase rhombohedral structure. Crystallite size ranged from 30 nm to 25 nm, emphasizing their nanoscale characteristics. The lower bulk density compared with the x-ray density indicated the presence of pores. Lattice constants were computed with Cell software, indicating that substituting Bi3+ with the smaller Gd3+ ions resulted in modifications to the lattice structure. Fourier-transform infrared (FTIR) spectra revealed absorption bands between 400 cm−1 and 600 cm−1, with shifts observed as the Gd concentration increased, signifying doping effects on the structure. A decrease in the frequencies of both ν1 and ν2 bands was observed, attributed to the disruption of the Fe3+–O2− bond and the rearrangement of cations due to Gd incorporation. Dielectric studies performed at room temperature within the 1–3 GHz range revealed a decrease in both real and imaginary parts of permittivity as frequency increased, consistent with the Maxwell–Wagner polarization model. At higher frequencies, the alternating-current (AC) conductivity increases substantially owing to the contribution of grains and enhanced polarization at neighboring sites. The sample with x = 0.16 exhibited low dielectric losses of 0.21 GHz at 3 GHz. The decrease in the quality factor is linked to a rise in loss caused by the formation of pores within the grains. Moreover, for x = 0.16, a reflection loss of −66.57 dB was measured at 0.98 GHz. These findings highlight the potential of these materials for cutting-edge uses, especially in multilayer chip inductors and high-frequency microwave systems.