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<p>The analysis of radioisotopes of trace elements in silicon carbide (β-SiC) nanoparticles was conducted as a function of time following neutron irradiation. The concentration of trace elements and sample purity were determined using the k0-INAA technique. A comparative analysis was performed to examine the effects of trace and dopant elements on the electrical conductivity of β-SiC nanoparticles before and after neutron irradiation. Electrical conductivity was examined across frequency and temperature ranges pre- and post-irradiation. Following neutron irradiation, radiation-induced conductivity (RIC) was recorded in silicon carbide nanoparticles and explored as a function of frequency. The interdependence between the real and imaginary components of electrical conductivity was analyzed to determine the type of conductivity.</p>

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Modulation of Conductivity in Neutron-Irradiated Nanocrystalline β-SiC Through Trace and Dopant Elements

  • 期刊论文

  • 发表日期：

    2025年8月8日

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  • Elchin M. Huseynov

摘要

The analysis of radioisotopes of trace elements in silicon carbide (β-SiC) nanoparticles was conducted as a function of time following neutron irradiation. The concentration of trace elements and sample purity were determined using the k0-INAA technique. A comparative analysis was performed to examine the effects of trace and dopant elements on the electrical conductivity of β-SiC nanoparticles before and after neutron irradiation. Electrical conductivity was examined across frequency and temperature ranges pre- and post-irradiation. Following neutron irradiation, radiation-induced conductivity (RIC) was recorded in silicon carbide nanoparticles and explored as a function of frequency. The interdependence between the real and imaginary components of electrical conductivity was analyzed to determine the type of conductivity.