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<p>A transparent UV photodetector based on NiO/Ti-doped ZnO (TZO) composite films with a lateral electrode structure is synthesized by magnetron sputtering. The device shows double-sided 365&#xa0;nm and 255&#xa0;nm UV response under forward or reverse bias. The responsivity and detectivity (front/back illumination) are maximized to 43.0/6.4&#xa0;mA/W and 5.7 × 10<sup>10</sup>/8.7 × 10<sup>9</sup> Jones at 365&#xa0;nm, and 8.0/19.0&#xa0;mA/W and 1.1 × 10<sup>10</sup>/2.6 × 10<sup>10</sup> Jones at 255&#xa0;nm. Moreover, due to the intrinsic nature of the heterojunction, the NiO/TZO photodetector exhibits a fast response time (&lt; 40&#xa0;ms) and low photocurrent fluctuation coefficient (front 0.3%, back 5.5%). These results show that the NiO/TZO photodetector has advantages including fast response speed, stability, and double-sided response, which offers promising opportunities for the development of intelligent integrated invisible optoelectronic devices.</p>

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A Transparent UV Photodetector Based on NiO/Ti-Doped ZnO with Double-Sided Response and High Photocurrent Stability

  • 期刊论文

  • 发表日期：

    2025年7月11日

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  • Xiuqing Cao,
  • Jinchao Qiu,
  • Zhenying Chen,
  • Yuyang Huang,
  • Wen Deng,
  • LeiLei Yang,
  • Qi Lan

摘要

A transparent UV photodetector based on NiO/Ti-doped ZnO (TZO) composite films with a lateral electrode structure is synthesized by magnetron sputtering. The device shows double-sided 365 nm and 255 nm UV response under forward or reverse bias. The responsivity and detectivity (front/back illumination) are maximized to 43.0/6.4 mA/W and 5.7 × 1010/8.7 × 109 Jones at 365 nm, and 8.0/19.0 mA/W and 1.1 × 1010/2.6 × 1010 Jones at 255 nm. Moreover, due to the intrinsic nature of the heterojunction, the NiO/TZO photodetector exhibits a fast response time (< 40 ms) and low photocurrent fluctuation coefficient (front 0.3%, back 5.5%). These results show that the NiO/TZO photodetector has advantages including fast response speed, stability, and double-sided response, which offers promising opportunities for the development of intelligent integrated invisible optoelectronic devices.