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<p>Vanadium dioxide (VO<sub>2</sub>) exhibits a unique metal-insulator transition near room temperature, making it a promising candidate for novel optoelectronic devices. However, VO<sub>2</sub> thin films with superior phase-transition performance exhibit a narrow process window, thereby restricting their practical applications. In this work, VO<sub><i>x</i></sub> thin films were synthesized via reactive magnetron sputtering under varying oxygen flow rates, followed by air-annealing treatment to obtain high-performance VO<sub>2</sub> thin films. The influence of oxygen flow rate during deposition on the phase transition characteristics was systematically investigated through x-ray diffraction (XRD) analysis, optical/electrical thermal hysteresis curves, high/low-temperature optical transmission spectra, and surface morphology, respectively. Optimized VO<sub>2</sub> films achieved under 0.8 sccm oxygen flow rate and 40-min 360°C air-annealing treatment demonstrated over 50% transmittance change at 1550&#xa0;nm and a three-order-of-magnitude reduction in sheet resistance. This study significantly mitigates the fabrication challenges of VO<sub>2</sub> thin films, thereby advancing their practical applications.</p>

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High-Performance VO2 Thin Film Prepared Via Room-Temperature-Deposition and Air-Annealing Treatment

  • 期刊论文

  • 发表日期：

    2025年7月6日

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  • Jingjia Chen,
  • Xia Tian,
  • Liurui Ye,
  • Peizhou Lu,
  • Qihang Luo,
  • Jiayao Yan,
  • Yi Liu,
  • Aihua Zhong,
  • Xingmin Cai,
  • Fan Ye,
  • Dongping Zhang

摘要

Vanadium dioxide (VO2) exhibits a unique metal-insulator transition near room temperature, making it a promising candidate for novel optoelectronic devices. However, VO2 thin films with superior phase-transition performance exhibit a narrow process window, thereby restricting their practical applications. In this work, VOx thin films were synthesized via reactive magnetron sputtering under varying oxygen flow rates, followed by air-annealing treatment to obtain high-performance VO2 thin films. The influence of oxygen flow rate during deposition on the phase transition characteristics was systematically investigated through x-ray diffraction (XRD) analysis, optical/electrical thermal hysteresis curves, high/low-temperature optical transmission spectra, and surface morphology, respectively. Optimized VO2 films achieved under 0.8 sccm oxygen flow rate and 40-min 360°C air-annealing treatment demonstrated over 50% transmittance change at 1550 nm and a three-order-of-magnitude reduction in sheet resistance. This study significantly mitigates the fabrication challenges of VO2 thin films, thereby advancing their practical applications.