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<p>(Bi<sub>0.25</sub>Sb<sub>0.75</sub>)<sub>2</sub>Te<sub>3</sub> is commonly used commercial p-type thermoelectric material, widely utilized for cooling devices. However, when soldered with Sn at 250°C, (Bi,Sb)<sub>2</sub>Te<sub>3</sub> exhibits an unusually high growth rate of the SnTe phase. This study demonstrated that the addition of small amounts of Ga to Sn-based solder can effectively suppress the formation of SnTe. To further investigate this effect, the interfacial reactions between (Bi,Sb)<sub>2</sub>Te<sub>3</sub> and Sn-Ga solders containing 0.1–1.0 wt.% Ga were systematically investigated at 250°C. When the Ga content was below 0.4 wt.%, a uniform and porous SnTe layer was formed at the interface, exhibiting linear growth with aging time. As the Ga concentration increased, a notable decrease in the growth rate of the SnTe phase was observed. Specifically, the growth rates were approximately 8.8, 4.6, and 2.2&#xa0;µm/min for Sn-Ga solders containing 0.1 wt.%, 0.2 wt.%, and 0.4 wt.% Ga, respectively. Notably, when the Ga content reached 0.5 wt.%, the formation of scallop-shaped SnTe was almost completely suppressed. This pronounced inhibition effect is primarily attributed to the suppression of SnTe nucleation. With an increase in Ga concentration to 1 wt.%, a rod-like GaTe phase was also observed, in addition to the SnTe phase. Moreover, in the solid-state reactions at 180°C with 0.5 wt.% Ga, the dominant reaction phase shifted to GaTe, and the interface remained stable even after aging of 50&#xa0;days. Thus, the addition of 0.5 wt.% Ga can be considered an optimal concentration for soldering with the (Bi,Sb)<sub>2</sub>Te<sub>3</sub> substrate, enabling a barrier-free interconnection design for thermoelectric modules.</p>

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Effective Suppression of Interfacial Reactions Between p-Type (Bi,Sb)2Te3 Thermoelectric Material and Sn-Ga Solders with Minor Ga Addition

  • 期刊论文

  • 发表日期：

    2025年7月3日

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  • Chao-hong Wang,
  • Mei-hau Li

摘要

(Bi0.25Sb0.75)2Te3 is commonly used commercial p-type thermoelectric material, widely utilized for cooling devices. However, when soldered with Sn at 250°C, (Bi,Sb)2Te3 exhibits an unusually high growth rate of the SnTe phase. This study demonstrated that the addition of small amounts of Ga to Sn-based solder can effectively suppress the formation of SnTe. To further investigate this effect, the interfacial reactions between (Bi,Sb)2Te3 and Sn-Ga solders containing 0.1–1.0 wt.% Ga were systematically investigated at 250°C. When the Ga content was below 0.4 wt.%, a uniform and porous SnTe layer was formed at the interface, exhibiting linear growth with aging time. As the Ga concentration increased, a notable decrease in the growth rate of the SnTe phase was observed. Specifically, the growth rates were approximately 8.8, 4.6, and 2.2 µm/min for Sn-Ga solders containing 0.1 wt.%, 0.2 wt.%, and 0.4 wt.% Ga, respectively. Notably, when the Ga content reached 0.5 wt.%, the formation of scallop-shaped SnTe was almost completely suppressed. This pronounced inhibition effect is primarily attributed to the suppression of SnTe nucleation. With an increase in Ga concentration to 1 wt.%, a rod-like GaTe phase was also observed, in addition to the SnTe phase. Moreover, in the solid-state reactions at 180°C with 0.5 wt.% Ga, the dominant reaction phase shifted to GaTe, and the interface remained stable even after aging of 50 days. Thus, the addition of 0.5 wt.% Ga can be considered an optimal concentration for soldering with the (Bi,Sb)2Te3 substrate, enabling a barrier-free interconnection design for thermoelectric modules.