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<p>Tungsten disulfide (WS<sub>2</sub>) has been exploited widely in optoelectronic devices in the post-graphenic era owing to its layer-dependent band gap tunability. However, the uniform deposition of large-area and good-quality films is still challenging and limiting its device-level applications. In this study, a few layers (bi- and trilayers) of large-area WS<sub>2</sub> thin films were deposited on Si/SiO<sub>2</sub> substrates employing the PLD, a versatile technique for the stoichiometric growth of few layers. We could obtain a uniform growth of a few layers of WS<sub>2</sub> over a 1&#xa0;cm&#xa0;×&#xa0;1&#xa0;cm substrate without the additional incorporation of sulfur. The influence of laser parameters, annealing temperatures, and time of deposition was optimized for the formation of bilayers of WS<sub>2</sub>. Raman spectroscopy combined with AFM confirms the bilayer formation of WS<sub>2</sub>. The crystallinity of the WS<sub>2</sub> film has been studied by transmission electron microscopy analysis. The uniform and large-area films deposited by PLD will open up new windows in optoelectronic device applications.</p>

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Pulsed Laser Deposition of Large-Area Bilayers of WS2 Thin Films

  • 期刊论文

  • 发表日期：

    2025年7月3日

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  • Saranya Sasi,
  • P. S. Midhun,
  • Antony Sharon,
  • M. K. Jayaraj,
  • Aldrin Antony,
  • R. Reshmi

摘要

Tungsten disulfide (WS2) has been exploited widely in optoelectronic devices in the post-graphenic era owing to its layer-dependent band gap tunability. However, the uniform deposition of large-area and good-quality films is still challenging and limiting its device-level applications. In this study, a few layers (bi- and trilayers) of large-area WS2 thin films were deposited on Si/SiO2 substrates employing the PLD, a versatile technique for the stoichiometric growth of few layers. We could obtain a uniform growth of a few layers of WS2 over a 1 cm × 1 cm substrate without the additional incorporation of sulfur. The influence of laser parameters, annealing temperatures, and time of deposition was optimized for the formation of bilayers of WS2. Raman spectroscopy combined with AFM confirms the bilayer formation of WS2. The crystallinity of the WS2 film has been studied by transmission electron microscopy analysis. The uniform and large-area films deposited by PLD will open up new windows in optoelectronic device applications.