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<p>Memristive devices represent a promising future for memory and computing technologies, offering non-volatile storage, high-speed switching, and analog capabilities. In this study, we report the fabrication and evaluation of HfO<sub>2</sub> thin films deposited on SiO<sub>2</sub> -layered Si (100) substrate using a simple, cost-effective chemical solution method. The HfO<sub>2</sub> thin films with thicknesses ranging from 79 to 316&#xa0;nm were investigated to assess their impact on the structural, electrical, and ferroelectric properties. The XRD analysis revealed that the thin films exhibit the tetragonal phase of HfO<sub>2</sub> with ferroelectric properties at room temperature, which was confirmed through the P–E hysteresis loops. The influence of film thickness on resistive switching behavior was revealed, providing insights into optimizing HfO<sub>2</sub>-based memristive devices for reliable and efficient memory applications. The HfO<sub>2</sub> film with an intermittent thickness exhibits superior performance, with as high ON/OFF ratio of ~ 977, attributed to its stability, balance between vacancy mobility and defect clustering, ensuring reliable switching. The switching mechanism follows the Schottky conduction model, which is linked to improved crystallinity, reduced defect density, and minimized strain effects.</p>

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Thickness-Dependent Resistive Switching Characteristics in HfO2/SiO2/Si Memristive Devices

  • 期刊论文

  • 发表日期：

    2025年7月2日

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  • J. Kaarthik,
  • Satyabrata Biswas,
  • Nayak Ram,
  • Salla Gangi Reddy,
  • Annapureddy Venkateswarlu

摘要

Memristive devices represent a promising future for memory and computing technologies, offering non-volatile storage, high-speed switching, and analog capabilities. In this study, we report the fabrication and evaluation of HfO2 thin films deposited on SiO2 -layered Si (100) substrate using a simple, cost-effective chemical solution method. The HfO2 thin films with thicknesses ranging from 79 to 316 nm were investigated to assess their impact on the structural, electrical, and ferroelectric properties. The XRD analysis revealed that the thin films exhibit the tetragonal phase of HfO2 with ferroelectric properties at room temperature, which was confirmed through the P–E hysteresis loops. The influence of film thickness on resistive switching behavior was revealed, providing insights into optimizing HfO2-based memristive devices for reliable and efficient memory applications. The HfO2 film with an intermittent thickness exhibits superior performance, with as high ON/OFF ratio of ~ 977, attributed to its stability, balance between vacancy mobility and defect clustering, ensuring reliable switching. The switching mechanism follows the Schottky conduction model, which is linked to improved crystallinity, reduced defect density, and minimized strain effects.