<p>In this study, radio frequency (RF) magnetron sputtering was used to deposit thin films at different incline angles. In addition, different homogeneous buffer layers were deposited and the intermittent time was adjusted for the thin film with the inclined process; then the structural quality of the film was optimized to further enhance the sensitivity and stability of the film for touch sensing. During the research process, a packaging process was also completed for the gallium-doped zinc oxide (GZO) sensing film to facilitate the subsequent touch-sensing analysis. The results show that a 40° inclined process with a 10-min homogeneous buffer layer and a 10-min intermittent interval for the cover layer yielded better touch sensitivity and stability than the as-grown thin film. Specifically, the sensitivity increased from 1.261 to 1.353, an increase of 7.2%. The difference in the stability as defined also improved from 0.203 kΩ to 0.04 kΩ. From high-resolution transmission electron microscopy (HRTEM) analysis, after the 40° inclined process, the columnar interface was almost entirely amorphous structures. Films without the inclined process exhibited an interface between polycrystalline and amorphous structures. The amorphous structure area should be able to properly buffer the stress of structural deformation, so that the film has better touch sensing. This study demonstrates that the optimization of GZO film by an inclined process can improve the characteristics of the film for touch-sensing applications.</p>