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Abstract <p>Amorphous indium gallium zinc oxide (a-IGZO) is recognized as one of the most promising materials for fabricating thin film transistors (TFTs). This study reports that the performances of IGZO TFTs can be significantly improved by doping tin. Amorphous indium gallium zinc tin oxide thin film transistors (a-IGZTO TFTs) sputtered at room temperature exhibit remarkable performances compared to a-IGZO TFTs, with a greater than twofold increase in field-effect mobility (18.4–50.6 cm<sup>2</sup>V<sup>−1</sup>&#xa0;s<sup>−1</sup>), a noticeable reduction in subthreshold swing (0.718–0.452&#xa0;V/dec), and an order of magnitude improvement in on/off current ratio (10<sup>7</sup>–10<sup>8</sup>). Moreover, the gate bias stress stability of IGZTO TFTs has also been strengthened. The enhancement of its electrical performances and stability is attributed to the reduction of oxygen vacancies and interface trap density caused by Sn doping, which forms efficient conductive pathways and improves the charge transport characteristics. The results indicate that high-performance IGZTO TFTs doped with Sn have significant application potential in the fields of high-resolution and flexible display technology.</p> Graphical Abstract <p></p>

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Tin Doping Enhanced Carrier Mobility and Stability in Amorphous IGZTO Thin Film Transistors

  • 期刊论文

  • 发表日期：

    2025年6月25日

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  • Wenjing Zha,
  • Suhui Fang,
  • Xiaofeng Gao,
  • Mijie Zou,
  • Jiuzhou Deng,
  • Longjie Hu,
  • Dingshan Zheng,
  • Yan-Hua Liao

摘要

Abstract

Amorphous indium gallium zinc oxide (a-IGZO) is recognized as one of the most promising materials for fabricating thin film transistors (TFTs). This study reports that the performances of IGZO TFTs can be significantly improved by doping tin. Amorphous indium gallium zinc tin oxide thin film transistors (a-IGZTO TFTs) sputtered at room temperature exhibit remarkable performances compared to a-IGZO TFTs, with a greater than twofold increase in field-effect mobility (18.4–50.6 cm2V−1 s−1), a noticeable reduction in subthreshold swing (0.718–0.452 V/dec), and an order of magnitude improvement in on/off current ratio (107–108). Moreover, the gate bias stress stability of IGZTO TFTs has also been strengthened. The enhancement of its electrical performances and stability is attributed to the reduction of oxygen vacancies and interface trap density caused by Sn doping, which forms efficient conductive pathways and improves the charge transport characteristics. The results indicate that high-performance IGZTO TFTs doped with Sn have significant application potential in the fields of high-resolution and flexible display technology.

Graphical Abstract