The Effects of Potassium Doping on the Structural Integrity and Electrical Properties of Zinc Oxide Nanoparticles
摘要
This study investigates the effects of potassium (K) doping on the structural, morphological, and electrical properties of zinc oxide (ZnO) nanoparticles. K-doped ZnO was synthesized and characterized using x-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and Fourier transform infrared (FTIR) spectroscopy. XRD analysis revealed a hexagonal wurtzite structure, with significant shifts in diffraction peaks, particularly at 30 wt% K doping, indicating lattice expansion along the a-axis. The calculated lattice parameter for the a-axis increased from 3.249 Å to 4.88 Å, suggesting that K+ ions substitute Zn2+, causing lateral distortion in the lattice. Crystallite size was estimated to be 32 nm with a microstrain of 0.0015. Electrical measurements showed that resistivity decreases with increasing temperature, following an inverse trend typical of semiconductors. A plot of ln(ρ) versus 1000/T demonstrated an activation energy of 0.57 eV. Temperature-dependent current measurements revealed stable current up to 120°C, followed by an exponential increase, highlighting the material’s sensitivity to heat. These findings provide valuable insights for optimizing K-doped ZnO for electronic and optoelectronic applications, offering improved charge carrier mobility and thermal stability.
Graphical Abstract