Tuning the Bandgap and Dielectric Properties of CdSnO3 Through Ag Doping: Implications for Opto-electronic and Dielectric Applications
摘要
Perovskite materials are highly attractive for applications in solar cells, photocatalysis, and energy storage due to their tunable bandgap, efficient charge separation, and high specific capacitance. This study explores the impact of Ag doping at cadmium sites on these materials' structural, optical, electronic, and dielectric properties. CdSnO3 and Ag-doped CdSnO3 were synthesized using a sol–gel auto-combustion technique, XRD confirmed successful fabrication, revealing a characteristic perovskite structure and a larger crystallite size in the doped sample. UV-visible spectroscopy showed enhanced light absorption by the doped sample in the near-ultraviolet region. Tauc plot analysis indicated a reduction in the bandgap from 3.5 eV to 3.34 eV upon Ag doping. Using the UV-visible data and mathematical relationships, we estimated the refractive index, extinction coefficient, volume energy loss, and surface energy loss. The doped material exhibited a higher refractive index than the pure material,, while the extinction coefficient values suggest that both materials are optically transparent, leading to minimal energy loss. Doping increased the dielectric constant by over 450% (from 65 to 365). Interestingly, the pure sample displayed ideal behavior with zero tangent loss across most frequencies. This work paves the way for developing next-generation optoelectronic devices utilizing Ag-doped CdSnO3.
Graphical Abstract