Scholarlink

<p>This study introduces an optimized design for InGaP/InAlGaP dual-junction solar cells on a GaAs substrate, incorporating graded InGaP layers to ensure lattice matching across the system. The lattice mismatch between the InGaP and InAlGaP layers, which is typically around 2.3% due to their different lattice constants, can lead to strain accumulation and defects in the crystal structure. However, the incorporation of graded InGaP layers reduces this strain by gradually changing the InP ratio across the layers, allowing for a more uniform crystal structure and reducing the accumulation of strain. This reduction in strain increases charge carrier collection, reduces recombination losses, and improves the overall device performance. Special attention has been given to the selection of materials for critical components such as the tunnel junction and the back surface field layers. The performance metrics of the newly proposed structure are benchmarked against existing designs. Additionally, the study examines the effects of temperature variations on the efficiency and power output of these dual-junction solar cells. For this structure, short-circuit current density (<i>J</i><sub><i>sc</i></sub>) of 20.50&#xa0;mA/cm<sup>2</sup>, open-circuit voltage (<i>V</i><sub><i>oc</i></sub>) of 3.18&#xa0;V, a fill factor (FF) of 91.78%, and efficiency (<i>η</i>) of 59.86% were achieved under AM1.5 (1 sun) radiation at a constant temperature of 300&#xa0;K. Furthermore, analysis of this system at various temperatures revealed optimal performance at 240&#xa0;K under AM1.5 (1 sun) radiation, achieving <i>J</i><sub><i>sc</i></sub> of 20.489&#xa0;mA/cm<sup>2</sup>, <i>V</i><sub><i>oc</i></sub> of 3.27&#xa0;V, FF of 93.14%, and <i>η</i> of 62.49%.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Simulation Study of a Double-Junction InGaP/InAlGaP Solar Cell with Graded Layers and BSF: Investigating Temperature Effects

  • 期刊论文

  • 发表日期：

    2025年6月22日

查看全文
  • Neda Hasanzadeh,
  • Abdollah Eskandarian,
  • Abbas Ghadimi,
  • Ali Esmaeeli

摘要

This study introduces an optimized design for InGaP/InAlGaP dual-junction solar cells on a GaAs substrate, incorporating graded InGaP layers to ensure lattice matching across the system. The lattice mismatch between the InGaP and InAlGaP layers, which is typically around 2.3% due to their different lattice constants, can lead to strain accumulation and defects in the crystal structure. However, the incorporation of graded InGaP layers reduces this strain by gradually changing the InP ratio across the layers, allowing for a more uniform crystal structure and reducing the accumulation of strain. This reduction in strain increases charge carrier collection, reduces recombination losses, and improves the overall device performance. Special attention has been given to the selection of materials for critical components such as the tunnel junction and the back surface field layers. The performance metrics of the newly proposed structure are benchmarked against existing designs. Additionally, the study examines the effects of temperature variations on the efficiency and power output of these dual-junction solar cells. For this structure, short-circuit current density (Jsc) of 20.50 mA/cm2, open-circuit voltage (Voc) of 3.18 V, a fill factor (FF) of 91.78%, and efficiency (η) of 59.86% were achieved under AM1.5 (1 sun) radiation at a constant temperature of 300 K. Furthermore, analysis of this system at various temperatures revealed optimal performance at 240 K under AM1.5 (1 sun) radiation, achieving Jsc of 20.489 mA/cm2, Voc of 3.27 V, FF of 93.14%, and η of 62.49%.