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<p>Ga<sub>2</sub>O<sub>3</sub> is considered a promising semiconductor material for solar-blind photodetectors (SBPD) due to its ultra-wide bandgap (4.9&#xa0;eV) and high chemical and thermal stability. One-dimensional (1D) nanostructures have stronger surface effects and can effectively improve photoconductivity performance. Doping is an effective method to improve the electrical and optoelectronic properties of Ga<sub>2</sub>O<sub>3</sub> nanowires (NWs). However, there is limited research on the influence of doping on the morphology of NWs, especially the relationship between morphology and optoelectronic properties. In this work, morphological control of bridging 1D Ga<sub>2</sub>O<sub>3</sub> nanostructures from NWs to nanobelts (NBs) was achieved by In doping. In doping can increase the lateral growth rate and broaden the diameter of NWs/NBs, improving the connectivity of bridging NWs and thus enhancing the absorption of light. Meanwhile, In doping can also reduce the bandgap of Ga<sub>2</sub>O<sub>3</sub> NWs/NBs, and the lower In–O bond binding energy further promotes electron transport performance, obtaining a larger photocurrent (15.8&#xa0;μA). The bridging device has a faster response speed (20&#xa0;ms), which is due to the role of photosensitive NW–NW junction barrier in cross-bridged NWs. The bridging growth of 1D Ga<sub>2</sub>O<sub>3</sub> nanostructures with controllable morphology provides an effective approach for the development of micro integrated high-performance photodetectors (PDs).</p>

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Doping Enhanced Optoelectronic Properties of Ga2O3 Bridging One-Dimensional Nanostructures: From Nanowires to Nanobelts

  • 期刊论文

  • 发表日期：

    2025年6月13日

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  • Bing Bai,
  • Danna Zhao,
  • Zhijie Li,
  • Ming Tian,
  • Bayaer Buren,
  • Lifu Bao

摘要

Ga2O3 is considered a promising semiconductor material for solar-blind photodetectors (SBPD) due to its ultra-wide bandgap (4.9 eV) and high chemical and thermal stability. One-dimensional (1D) nanostructures have stronger surface effects and can effectively improve photoconductivity performance. Doping is an effective method to improve the electrical and optoelectronic properties of Ga2O3 nanowires (NWs). However, there is limited research on the influence of doping on the morphology of NWs, especially the relationship between morphology and optoelectronic properties. In this work, morphological control of bridging 1D Ga2O3 nanostructures from NWs to nanobelts (NBs) was achieved by In doping. In doping can increase the lateral growth rate and broaden the diameter of NWs/NBs, improving the connectivity of bridging NWs and thus enhancing the absorption of light. Meanwhile, In doping can also reduce the bandgap of Ga2O3 NWs/NBs, and the lower In–O bond binding energy further promotes electron transport performance, obtaining a larger photocurrent (15.8 μA). The bridging device has a faster response speed (20 ms), which is due to the role of photosensitive NW–NW junction barrier in cross-bridged NWs. The bridging growth of 1D Ga2O3 nanostructures with controllable morphology provides an effective approach for the development of micro integrated high-performance photodetectors (PDs).