<p>This study is focused on the carrier transport, thermoelectric performance, and flexibility of S-doped β-Cu<sub>2</sub>Se film and the output power of its thermoelectric generator. Experimental results demonstrated that the doped S replaced Se in the β-Cu<sub>2</sub>Se lattice, forming a Cu<sub>2</sub>(Se,S) solid solution. The carrier concentration and electrical conductivity decreased and the mobility, Seebeck coefficient, and power factor increased with increasing S content in the deposited Cu<sub>2</sub>(Se,S) films. At room temperature, the deposited Cu<sub>2</sub>(Se,S) film with 6.3 at.% S content reached a maximum Seebeck coefficient of 57&#xa0;µV&#xa0;K<sup>−1</sup> and power factor of 0.52 mW&#xa0;m<sup>−1</sup>&#xa0;K<sup>−2</sup>. After 1500 forward and back bending cycles, the loss of electrical conductivity under compressive and tensile stress was only 7% and 13%, respectively. This demonstrated that the deposited Cu<sub>2</sub>(Se,S) solid solution films possessed outstanding flexibility. The maximum power density (<i>PD</i><sub>max</sub>) of the thermoelectric generator for S5 films (6.3 at.% S content) was 5.43&#xa0;W&#xa0;m<sup>−2</sup> and 9.09&#xa0;W&#xa0;m<sup>−2</sup> for Δ<i>T</i> = 30&#xa0;K and 40&#xa0;K, respectively. The mean normalized output power density (<i>PD</i><sub>max</sub> ·<i>L</i>/Δ<i>T</i><sup>2</sup>) reached 234.29&#xa0;µW&#xa0;m<sup>−1</sup>&#xa0;K<sup>−2</sup>.</p> Graphical Abstract <p></p>

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Enhanced Thermoelectric Performance of Cu2(Se,S) Films by S Substitution and Output Power for Its Flexible Thermoelectric Generator

  • Yu Chen,
  • Guihong Song,
  • Lingyu Zhang,
  • Yusheng Wu,
  • Junhua You

摘要

This study is focused on the carrier transport, thermoelectric performance, and flexibility of S-doped β-Cu2Se film and the output power of its thermoelectric generator. Experimental results demonstrated that the doped S replaced Se in the β-Cu2Se lattice, forming a Cu2(Se,S) solid solution. The carrier concentration and electrical conductivity decreased and the mobility, Seebeck coefficient, and power factor increased with increasing S content in the deposited Cu2(Se,S) films. At room temperature, the deposited Cu2(Se,S) film with 6.3 at.% S content reached a maximum Seebeck coefficient of 57 µV K−1 and power factor of 0.52 mW m−1 K−2. After 1500 forward and back bending cycles, the loss of electrical conductivity under compressive and tensile stress was only 7% and 13%, respectively. This demonstrated that the deposited Cu2(Se,S) solid solution films possessed outstanding flexibility. The maximum power density (PDmax) of the thermoelectric generator for S5 films (6.3 at.% S content) was 5.43 W m−2 and 9.09 W m−2 for ΔT = 30 K and 40 K, respectively. The mean normalized output power density (PDmax ·LT2) reached 234.29 µW m−1 K−2.

Graphical Abstract