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<p>This study investigated the effects of spin-coating parameters on the microstructure and piezoelectric properties of ZnO thin films fabricated through a sol–gel method. ZnO seed layers were prepared at different spin speeds and layer numbers, followed by the hydrothermal growth of ZnO nanosheets. X-ray diffraction analysis revealed that ZnO thin films prepared at 3000&#xa0;rpm with 3 seed layers exhibited optimal crystallinity. Scanning electron microscopy observations showed that increasing spin speeds initially improved uniformity but reduced it at higher speeds, while increasing the numbers of seed layer led to larger grain diameters and reduced uniformity. The piezoelectric output power of ZnO thin-film devices positively correlated with the crystallinity, achieving a maximum output of 533.21&#xa0;mW at a vibration frequency of 20&#xa0;Hz with 3 seed layers at 3000&#xa0;rpm. These findings provide valuable insights into optimizing ZnO-based piezoelectric properties for general electronic device applications.</p>

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Optimization of ZnO Piezoelectric Properties: Effects of Spin-Coating Parameters on Microstructure and Performance

  • 期刊论文

  • 发表日期：

    2025年5月13日

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  • Yi-Hsuan Yeh,
  • David T. W. Lin,
  • Kun-Dar Li

摘要

This study investigated the effects of spin-coating parameters on the microstructure and piezoelectric properties of ZnO thin films fabricated through a sol–gel method. ZnO seed layers were prepared at different spin speeds and layer numbers, followed by the hydrothermal growth of ZnO nanosheets. X-ray diffraction analysis revealed that ZnO thin films prepared at 3000 rpm with 3 seed layers exhibited optimal crystallinity. Scanning electron microscopy observations showed that increasing spin speeds initially improved uniformity but reduced it at higher speeds, while increasing the numbers of seed layer led to larger grain diameters and reduced uniformity. The piezoelectric output power of ZnO thin-film devices positively correlated with the crystallinity, achieving a maximum output of 533.21 mW at a vibration frequency of 20 Hz with 3 seed layers at 3000 rpm. These findings provide valuable insights into optimizing ZnO-based piezoelectric properties for general electronic device applications.