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<p>The strong polarization effects in InAlN/GaN heterostructures significantly enhance two-dimensional electron gas (2DEG) density compared to conventional AlGaN/GaN high-electron-mobility transistors (HEMTs), presenting superior potential for high-power applications. Herein, we propose a novel trench-gate HEMT architecture featuring a <i>p</i>-type GaN (p-GaN) cap integrated on the etched In<sub>0.17</sub>Al<sub>0.83</sub>N barrier layer. Through systematic TCAD simulations, key parameters of the p-GaN cap layer were optimized to achieve enhanced current characteristics. Preliminary simulation results indicated a substantial increase in the maximum saturation current (<i>I</i><sub>sat</sub>) of 164.6&#xa0;mA/mm and transconductance (<i>g</i><sub>m</sub>) of 164.6&#xa0;mS/mm, but an undesirable decrease in the threshold voltage (<i>V</i><sub>th</sub>). To address this limitation, an innovative InGaN buried layer was strategically incorporated between the GaN channel and buffer layers directly beneath the gate region. This architectural modification successfully stabilized 2DEG density while achieving <i>V</i><sub>th</sub> enhancement through polarization engineering. The optimized device exhibited remarkable performance metrics: 44.9% increase in <i>I</i><sub>sat</sub>, at 2414&#xa0;mA/mm, and with <i>V</i><sub>th</sub> of 5.3&#xa0;V compared to conventional AlGaN/GaN HEMTs. These results demonstrate that the synergistic combination of the trench-gate p-GaN architecture with the InGaN polarization modulation layer provides an effective approach for developing next-generation power electronic devices with enhanced current handling capability and improved gate controllability.</p>

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Research on High-Threshold-Voltage InAlN/GaN HEMTs with p-GaN Caps and Trench Gates with InGaN Buried Layers

  • 期刊论文

  • 发表日期：

    2025年6月7日

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  • Yi-Fei Chen,
  • Li-E Cai,
  • Kai Niu,
  • Zhi-Yu Ma,
  • Zhi-Chao Chen,
  • Xiang-Yu Liu,
  • Chuan-Tao Sun,
  • Dong Sun,
  • Hai-Feng Lin,
  • Fei-Bing Xiong

摘要

The strong polarization effects in InAlN/GaN heterostructures significantly enhance two-dimensional electron gas (2DEG) density compared to conventional AlGaN/GaN high-electron-mobility transistors (HEMTs), presenting superior potential for high-power applications. Herein, we propose a novel trench-gate HEMT architecture featuring a p-type GaN (p-GaN) cap integrated on the etched In0.17Al0.83N barrier layer. Through systematic TCAD simulations, key parameters of the p-GaN cap layer were optimized to achieve enhanced current characteristics. Preliminary simulation results indicated a substantial increase in the maximum saturation current (Isat) of 164.6 mA/mm and transconductance (gm) of 164.6 mS/mm, but an undesirable decrease in the threshold voltage (Vth). To address this limitation, an innovative InGaN buried layer was strategically incorporated between the GaN channel and buffer layers directly beneath the gate region. This architectural modification successfully stabilized 2DEG density while achieving Vth enhancement through polarization engineering. The optimized device exhibited remarkable performance metrics: 44.9% increase in Isat, at 2414 mA/mm, and with Vth of 5.3 V compared to conventional AlGaN/GaN HEMTs. These results demonstrate that the synergistic combination of the trench-gate p-GaN architecture with the InGaN polarization modulation layer provides an effective approach for developing next-generation power electronic devices with enhanced current handling capability and improved gate controllability.