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<p>This study elucidates the dynamic evolution mechanisms and stabilization principles of topological domain walls (DWs) in geometrically confined arrays of BiFeO<sub>3</sub> nanodots via advanced vector piezoresponse force microscopy. Bismuth ferrite is a key multiferroic material that combines strong room-temperature ferroelectricity and antiferromagnetism, enabling advanced nonvolatile spintronic applications. We demonstrate that double-center domains exhibit boundaries of DWs between in-plane domains, with tunable morphologies ranging from intersection to parallel configurations. This behavior is governed by charge compensation mediated by oxygen vacancies. Notably, electric field-driven DW migration enables sub-10-nm precision in domain reconfiguration, surpassing conventional polarization-switching paradigms. Qualitative analysis via phase-field simulation reveals that oxygen vacancies not only stabilize diverse DW geometries but also facilitate the formation of mixed polarization states through surface charge redistribution. Crucially, these confined topological domains maintain exceptional stability (exceeding 14&#xa0;days) under ambient conditions while achieving a storage density of 64 Gbit/inch<sup>2</sup>. Our findings provide a fundamental framework for manipulating nanoscale ferroelectric topology through defect engineering and strain‒gradient control, opening avenues for ultrahigh-density nonvolatile memory and reconfigurable nanoelectronic devices. This work bridges the critical gap between static domain characterization and dynamic topological phase transitions in low-dimensional ferroelectrics.</p>

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Ferroelectric Nanodot Arrays with Topologically Confined Domain Walls in Center Domains

  • 期刊论文

  • 发表日期：

    2025年5月1日

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  • Siyi Zhang,
  • Jinyang Wu,
  • Qingsheng Li,
  • Hao Liu,
  • Shuhan Zheng,
  • Zhongwen Li

摘要

This study elucidates the dynamic evolution mechanisms and stabilization principles of topological domain walls (DWs) in geometrically confined arrays of BiFeO3 nanodots via advanced vector piezoresponse force microscopy. Bismuth ferrite is a key multiferroic material that combines strong room-temperature ferroelectricity and antiferromagnetism, enabling advanced nonvolatile spintronic applications. We demonstrate that double-center domains exhibit boundaries of DWs between in-plane domains, with tunable morphologies ranging from intersection to parallel configurations. This behavior is governed by charge compensation mediated by oxygen vacancies. Notably, electric field-driven DW migration enables sub-10-nm precision in domain reconfiguration, surpassing conventional polarization-switching paradigms. Qualitative analysis via phase-field simulation reveals that oxygen vacancies not only stabilize diverse DW geometries but also facilitate the formation of mixed polarization states through surface charge redistribution. Crucially, these confined topological domains maintain exceptional stability (exceeding 14 days) under ambient conditions while achieving a storage density of 64 Gbit/inch2. Our findings provide a fundamental framework for manipulating nanoscale ferroelectric topology through defect engineering and strain‒gradient control, opening avenues for ultrahigh-density nonvolatile memory and reconfigurable nanoelectronic devices. This work bridges the critical gap between static domain characterization and dynamic topological phase transitions in low-dimensional ferroelectrics.