<p>In this paper, an inventive analytical modeling of drain current for the silicon-on-insulator (SOI)-raised buried oxide (RBOX) ferroelectric gate (Fe) tunnel field-effect transistor (TFET) laid on the tunneling window is proposed. Utilizing this model, the critical parameters for direct-current (DC) and radio-frequency (RF)/analog applications, such as the output current (<i>I</i>_d), the transconductance (<i>g</i>_m), its efficiency factor (<i>g</i>_m/<i>I</i>_d), and the cutoff frequency (<i>F</i>_t) have been computed based on the tunneling window voltage, electric field, Urbach energy, and the current onset. The Urbach energy factor and the electric field based on the thickness and the voltage drop across it, the ferroelectric layer (<Emphasis Type="Underline">t</Emphasis>_Fe and <i>V</i>_Fe), the remanent polarization (<i>P</i>_r), the coercive field (<i>E</i>_c), the anisotropic constants (⍺_Fe and β_Fe), the material's inherent constants, and a few fitting parameters proved the proposed model’s validation for the DC and RF/analog applicability in ultralow-power and high-speed applications. The authentication of this model has been confirmed using the simulation results of the proposed device using the two-dimensional (2D) Synopsys TCAD (technology computer-aided design) environment. The proposed device off- and on-state currents are 7.39 × 10⁻¹³ A/<i>μ</i>m and 3.53 × 10⁻⁴ A/<i>μ</i>m, respectively, with a subthreshold slope of 30.76&#xa0;mV/dec and transconductance of 7.35 × 10⁻³ S/<i>μ</i>m along with a cutoff frequency of 71 THz. This analytical model can be readily adapted to estimate and interpret the RF/analog performance parameters of any negative-capacitance ferroelectric gate TFET, and the comparison of the various performance parameters with the existing TFETs proves its outstanding efficacy. The operation of the SOI-RBOX-Fe TFET as an inverter is also investigated for digital applicability.</p>