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<p>Gallium oxide (Ga<sub>2</sub>O<sub>3</sub>) material has an ultra-wide bandwidth of 4.9 eV and a breakdown field strength of up to 8 MV/cm, which holds great promise in the field of high-power and low-power devices. However, due to the extremely low thermal conductivity of <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> , between 10 and 27 W/(m&#xa0;K) at room temperature, the self-heating effect of devices based on this material is significant. We have carried out a study of lateral <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> MOSFET device materials and dimensions to improve the self-heating effect, device simulation and digital fitting, simulation and analysis of silicon, silicon carbide, aluminum nitride, and diamond substrate compared to gallium oxide in the self-heating effect of the advantages of exploring the device gate length and the gate leakage spacing on the device heat dissipation and the optimization of parameters. Finally, this article proposed a high thermal conductivity diamond substrate device structure, using gate length <i>l</i><sub><i>g</i></sub>&#xa0;=&#xa0;8&#xa0;<i>μ</i>m, gate drain spacing <i>l</i><sub><i>gd</i></sub>&#xa0;=&#xa0;13&#xa0;<i>μ</i>m, and gate source spacing <i>l</i><sub><i>gs</i></sub>&#xa0;=&#xa0;7/9&#xa0;<i>μ</i>m. The peak temperature of the device is reduced by 65% compared to the gallium oxide substrate, providing a theoretical basis for the optimization of thermal design of gallium oxide devices in the future.</p>

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High Thermal Conductive Ga2O3 MOSFET with Diamond Substrate and its Simulation Analysis

  • 期刊论文

  • 发表日期：

    2025年5月23日

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  • Duo Liu,
  • He Guan,
  • YongChuan Tang,
  • Ying Wang

摘要

Gallium oxide (Ga2O3) material has an ultra-wide bandwidth of 4.9 eV and a breakdown field strength of up to 8 MV/cm, which holds great promise in the field of high-power and low-power devices. However, due to the extremely low thermal conductivity of β-Ga2O3 , between 10 and 27 W/(m K) at room temperature, the self-heating effect of devices based on this material is significant. We have carried out a study of lateral β-Ga2O3 MOSFET device materials and dimensions to improve the self-heating effect, device simulation and digital fitting, simulation and analysis of silicon, silicon carbide, aluminum nitride, and diamond substrate compared to gallium oxide in the self-heating effect of the advantages of exploring the device gate length and the gate leakage spacing on the device heat dissipation and the optimization of parameters. Finally, this article proposed a high thermal conductivity diamond substrate device structure, using gate length lg = 8 μm, gate drain spacing lgd = 13 μm, and gate source spacing lgs = 7/9 μm. The peak temperature of the device is reduced by 65% compared to the gallium oxide substrate, providing a theoretical basis for the optimization of thermal design of gallium oxide devices in the future.