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<p>Comparing transport properties through electron mobility in current semiconductor materials is one of the ways to find high-performance and cost-effective electronic components. In this study, we investigate the mobility of a two-dimensional electron gas (2DEG) confined within finitely deep versus infinitely deep triangular quantum wells in AlGaN/GaN heterostructures (SHs). Using the variational subband-wave-function model, we analyze a comprehensive set of scattering mechanisms, including edge dislocation (DS), charged dislocation (DC), remote impurity (RI), interface roughness (IR), roughness-induced piezoelectric effects (PE), misfit deformation potential (DP), acoustic phonons, piezoelectric fields, and polar optical longitudinal optical (LO) phonons. Acoustic phonon scattering is treated as quasi-elastic, while inelastic scattering is addressed using an iterative method, with LO phonon scattering becoming dominant at higher temperatures. Our findings show that, in finitely deep quantum wells with lower potential barriers, electron mobility is primarily influenced by DS, DC, and IR scattering mechanisms. In contrast, infinitely deep quantum wells exhibit higher mobility, where RI, DP, PE, acoustic phonons, and LO phonons play a more significant role. Based on this quantum well mobility comparison, manufacturers know which scattering mechanism is dominant according to temperature or density, to adjust and increase the efficiency of the scattering mechanisms. Overall, our results highlight that infinitely deep triangular quantum wells offer superior electron mobility, making them promising for future high-performance electronic materials and devices.</p>

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Comparison of Mobility in Finite and Infinite Triangular Quantum Wells of AlGaN/GaN Structure

  • 期刊论文

  • 发表日期：

    2025年4月30日

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  • Vo Van Tai,
  • Truong Van Tuan,
  • Nguyen Duy Vy

摘要

Comparing transport properties through electron mobility in current semiconductor materials is one of the ways to find high-performance and cost-effective electronic components. In this study, we investigate the mobility of a two-dimensional electron gas (2DEG) confined within finitely deep versus infinitely deep triangular quantum wells in AlGaN/GaN heterostructures (SHs). Using the variational subband-wave-function model, we analyze a comprehensive set of scattering mechanisms, including edge dislocation (DS), charged dislocation (DC), remote impurity (RI), interface roughness (IR), roughness-induced piezoelectric effects (PE), misfit deformation potential (DP), acoustic phonons, piezoelectric fields, and polar optical longitudinal optical (LO) phonons. Acoustic phonon scattering is treated as quasi-elastic, while inelastic scattering is addressed using an iterative method, with LO phonon scattering becoming dominant at higher temperatures. Our findings show that, in finitely deep quantum wells with lower potential barriers, electron mobility is primarily influenced by DS, DC, and IR scattering mechanisms. In contrast, infinitely deep quantum wells exhibit higher mobility, where RI, DP, PE, acoustic phonons, and LO phonons play a more significant role. Based on this quantum well mobility comparison, manufacturers know which scattering mechanism is dominant according to temperature or density, to adjust and increase the efficiency of the scattering mechanisms. Overall, our results highlight that infinitely deep triangular quantum wells offer superior electron mobility, making them promising for future high-performance electronic materials and devices.