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<p>Silicon carbide (SiC) Schottky diodes are gaining traction for their potential in high-voltage, high-temperature, and radiation-resistant applications. While superior to traditional silicon (Si) diodes, their radiation hardness requires further exploration, particularly at lower energies. Although high-energy radiation undoubtedly degrades devices, understanding the impact of lower-energy radiation is crucial for real-world applications. This study employed 8&#xa0;MeV proton radiation, considered relatively low energy in radiation physics, to investigate the response of SiC Schottky diodes. Interestingly, the irradiated devices displayed a slight decrease in reverse leakage current, indicating improved blocking ability. Encouragingly, both forward current and capacitance remained relatively unaffected, with a minor change in the ideality factor. Microscopy confirmed these findings by revealing no surface-level defects or leakage current hotspots, solidifying the exceptional resilience of SiC Schottky diodes to even lower-energy radiation.</p>

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Effect of Low-Energy Proton Radiation on the Degradation of Silicon Carbide Schottky Diodes

  • 期刊论文

  • 发表日期：

    2025年5月5日

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  • Tamana Baba,
  • Nurul Fadzlin Hasbullah,
  • Yasir Javed,
  • Zafar Iqbal Khan,
  • Nurul Nabiilah Sulaiman

摘要

Silicon carbide (SiC) Schottky diodes are gaining traction for their potential in high-voltage, high-temperature, and radiation-resistant applications. While superior to traditional silicon (Si) diodes, their radiation hardness requires further exploration, particularly at lower energies. Although high-energy radiation undoubtedly degrades devices, understanding the impact of lower-energy radiation is crucial for real-world applications. This study employed 8 MeV proton radiation, considered relatively low energy in radiation physics, to investigate the response of SiC Schottky diodes. Interestingly, the irradiated devices displayed a slight decrease in reverse leakage current, indicating improved blocking ability. Encouragingly, both forward current and capacitance remained relatively unaffected, with a minor change in the ideality factor. Microscopy confirmed these findings by revealing no surface-level defects or leakage current hotspots, solidifying the exceptional resilience of SiC Schottky diodes to even lower-energy radiation.