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<p>Perovskite solar cells represent the third generation of solar cell technology and have garnered significant research attention due to their low cost and high efficiency. Researchers have taken a keen interest in further enhancing their efficiency and improving their stability. This paper reports the use of tin sulfide (SnS) as a hole transport layer (HTL) in lead-free methylammonium tin iodide (MASnI<sub>3</sub>) perovskite solar cells. SnS is a cost-effective and nontoxic material with direct-bandgap energy. The device layers were structured as indium tin oxide (ITO)/TiO<sub>2</sub>/CH<sub>3</sub>NH<sub>3</sub>SnI<sub>3</sub>/SnS/Au. The structural performance was investigated using the SCAPS-1D one-dimensional solar cell simulation software under illumination of 1000 W/m<sup>2</sup> with air mass (AM) of 1.5. Absorber parameters including thickness, doping density, and defect density and their influence on the device performance were elaborated. In addition, the effects of temperature, thickness, and doping density of both the HTL and electron transport layer (ETL) were clarified. By optimizing these parameters for the HTL, ETL, and absorber layers, the simulation generated electron–hole pairs within the absorber. It was found that the holes migrated to the SnS HTL and the electrons migrated towards the TiO<sub>2</sub> ETL. The carrier dynamics led to an open-circuit voltage (<i>V</i><sub>oc</sub>) of 0.95&#xa0;V, a short-circuit current density (<i>J</i><sub>sc</sub>) of 32.2&#xa0;mA/cm<sup>2</sup>, a fill factor (FF) of 83.04%, and maximum power conversion efficiency (PCE) of 25.58% at an initial temperature of 300&#xa0;K. SnS was found to be a favorable HTL with methylammonium tin iodide (MASnI<sub>3</sub>), enabling low-cost fabrication while achieving maximum PCE of 25.58%.</p>

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Numerical Simulation of MASnI3-Based Perovskite Solar Cell with SnS Hole Transport Layer

  • 期刊论文

  • 发表日期：

    2025年4月30日

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  • Matiullah Khan,
  • Muhammad Numan,
  • Abdul Hakim Shah

摘要

Perovskite solar cells represent the third generation of solar cell technology and have garnered significant research attention due to their low cost and high efficiency. Researchers have taken a keen interest in further enhancing their efficiency and improving their stability. This paper reports the use of tin sulfide (SnS) as a hole transport layer (HTL) in lead-free methylammonium tin iodide (MASnI3) perovskite solar cells. SnS is a cost-effective and nontoxic material with direct-bandgap energy. The device layers were structured as indium tin oxide (ITO)/TiO2/CH3NH3SnI3/SnS/Au. The structural performance was investigated using the SCAPS-1D one-dimensional solar cell simulation software under illumination of 1000 W/m2 with air mass (AM) of 1.5. Absorber parameters including thickness, doping density, and defect density and their influence on the device performance were elaborated. In addition, the effects of temperature, thickness, and doping density of both the HTL and electron transport layer (ETL) were clarified. By optimizing these parameters for the HTL, ETL, and absorber layers, the simulation generated electron–hole pairs within the absorber. It was found that the holes migrated to the SnS HTL and the electrons migrated towards the TiO2 ETL. The carrier dynamics led to an open-circuit voltage (Voc) of 0.95 V, a short-circuit current density (Jsc) of 32.2 mA/cm2, a fill factor (FF) of 83.04%, and maximum power conversion efficiency (PCE) of 25.58% at an initial temperature of 300 K. SnS was found to be a favorable HTL with methylammonium tin iodide (MASnI3), enabling low-cost fabrication while achieving maximum PCE of 25.58%.