Analyses of Electrical Transport Data on Non-degenerate p-Type Samples of Mg2Sn and Mg2Sn0.95Si0.05 Including Hopping Conduction
摘要
Regarding non-degenerate p-type samples of Mg2Sn, the temperature-dependent data on the conductivity σ(T) and the Hall coefficient RH(T) reported in the mid-twentieth century by Lichter (J Electrochem Soc 109:819, 1962) and Lawson et al. (J Electron Control 1:203, 1955), and those of σ(T), RH(T), and the Seebeck coefficient S(T) reported more recently by Chen et al. (Phys Stat Sol A 207:2523, 2010), have been critically re-analyzed. The simultaneous fits to the reported experimental data have been performed with hopping conduction in the low-temperature region and with the non-parabolicity of the conduction band in the high-temperature region taken into consideration. For both holes and electrons, reliable values of effective masses and deformation potentials have been deduced, together with the reliable value of the band gap energy. The σ(T), RH(T), and S(T) data on non-degenerate p-type samples of Mg2Sn0.95Si0.95 reported by Kim et al. (J Appl Phys 116:153706, 2014) have also been analyzed to deduce the alloy scattering potential.