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<p>A novel asymmetric trench silicon carbide metal–oxide–semiconductor field-effect transistor (MOSFET) with an L-shaped split gate (LSG), named LSG-ATMOS, is proposed and demonstrated. The LSG includes a main gate, an L-shaped source auxiliary gate, an L-shaped SiO<sub>2</sub> isolation layer, and an external SiO<sub>2</sub> layer. The source auxiliary gate completely wraps around the main gate, achieving shielding of gate–drain capacitance (<i>C</i><sub>gd</sub>) and optimizing the switching characteristics. Due to the drain-induced barrier-lowering effect, a low potential barrier short-channel self-biased MOSFET (SSM) was introduced on the lower side of the source auxiliary gate. The SSM can avoid the conduction of the intrinsic body diode and eliminate the bipolar degradation effect in the third quadrant. In addition, the L-shaped SiO<sub>2</sub> isolation layer notably diminishes the gate–source capacitance (<i>C</i><sub>gs</sub>), reducing the demands on the driver circuit. The results show that the LSG-ATMOS achieves a 54.60% reduction in turn-off loss (<i>E</i><sub>off</sub>), a 97.34% decrease in turn-on loss (<i>E</i><sub>on</sub>), a 19.80% drop in cut-in voltage (<i>V</i><sub>cut-in</sub>) at source–drain current (<i>I</i><sub>sd</sub>) = 100 A, and a 72.99% reduction in reverse recovery charge (<i>Q</i><sub>trr</sub>) at <i>I</i><sub>sd</sub> = 200 A compared with the conventional ATMOS (C-ATMOS)<sub>.</sub></p>

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A Novel Asymmetric Trench SiC MOSFET with L-shaped Split Gate for Low Power Consumption and Fast Recovery

  • 期刊论文

  • 发表日期：

    2025年4月16日

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  • Weizhong Chen,
  • Zhijie Deng,
  • Zesheng Chen,
  • Yangqi Zhou,
  • Zhengsheng Han,
  • Zeheng Wang

摘要

A novel asymmetric trench silicon carbide metal–oxide–semiconductor field-effect transistor (MOSFET) with an L-shaped split gate (LSG), named LSG-ATMOS, is proposed and demonstrated. The LSG includes a main gate, an L-shaped source auxiliary gate, an L-shaped SiO2 isolation layer, and an external SiO2 layer. The source auxiliary gate completely wraps around the main gate, achieving shielding of gate–drain capacitance (Cgd) and optimizing the switching characteristics. Due to the drain-induced barrier-lowering effect, a low potential barrier short-channel self-biased MOSFET (SSM) was introduced on the lower side of the source auxiliary gate. The SSM can avoid the conduction of the intrinsic body diode and eliminate the bipolar degradation effect in the third quadrant. In addition, the L-shaped SiO2 isolation layer notably diminishes the gate–source capacitance (Cgs), reducing the demands on the driver circuit. The results show that the LSG-ATMOS achieves a 54.60% reduction in turn-off loss (Eoff), a 97.34% decrease in turn-on loss (Eon), a 19.80% drop in cut-in voltage (Vcut-in) at source–drain current (Isd) = 100 A, and a 72.99% reduction in reverse recovery charge (Qtrr) at Isd = 200 A compared with the conventional ATMOS (C-ATMOS).