<p>In the present work, germanium sulfide nanoribbons (GeSNR) were investigated for their potential as nanoscale interconnects using varied edge passivation techniques. Specifically, unilateral edge passivated and bilateral edge passivated zigzag GeSNR (ZGeSNR) were investigated under the influence of hydrogen, fluorine, and chlorine terminating elements. Owing to the conducting electronic nature of unilateral edge passivated ZGeSNR, these configurations were studied to examine crucial static and dynamical parameters including <InlineEquation ID="IEq1"> <InlineMediaObject> <ImageObject Color="BlackWhite" FileRef="11664_2025_11883_Article_IEq1.gif" Format="GIF" Height="19" Rendition="HTML" Resolution="72" Type="Linedraw" Width="60" /> </InlineMediaObject> <EquationSource Format="TEX">$R_Q, L_K, $</EquationSource> <EquationSource Format="MATHML"><math> <mrow> <msub> <mi>R</mi> <mi>Q</mi> </msub> <mo>,</mo> <msub> <mi>L</mi> <mi>K</mi> </msub> <mo>,</mo> </mrow> </math></EquationSource> </InlineEquation> and <InlineEquation ID="IEq2"> <InlineMediaObject> <ImageObject Color="BlackWhite" FileRef="11664_2025_11883_Article_IEq2.gif" Format="GIF" Height="19" Rendition="HTML" Resolution="72" Type="Linedraw" Width="25" /> </InlineMediaObject> <EquationSource Format="TEX">$C_Q$</EquationSource> <EquationSource Format="MATHML"><math> <msub> <mi>C</mi> <mi>Q</mi> </msub> </math></EquationSource> </InlineEquation> With the lowest values of <InlineEquation ID="IEq3"> <InlineMediaObject> <ImageObject Color="BlackWhite" FileRef="11664_2025_11883_Article_IEq3.gif" Format="GIF" Height="20" Rendition="HTML" Resolution="72" Type="Linedraw" Width="248" /> </InlineMediaObject> <EquationSource Format="TEX">$R_Q (12.91 K ohm), L_K (3.85 pF/cm),$</EquationSource> <EquationSource Format="MATHML"><math> <mrow> <msub> <mi>R</mi> <mi>Q</mi> </msub> <mrow> <mo stretchy="false">(</mo> <mn>12.91</mn> <mi>K</mi> <mi>o</mi> <mi>h</mi> <mi>m</mi> <mo stretchy="false">)</mo> </mrow> <mo>,</mo> <msub> <mi>L</mi> <mi>K</mi> </msub> <mrow> <mo stretchy="false">(</mo> <mn>3.85</mn> <mi>p</mi> <mi>F</mi> <mo stretchy="false">/</mo> <mi>c</mi> <mi>m</mi> <mo stretchy="false">)</mo> </mrow> <mo>,</mo> </mrow> </math></EquationSource> </InlineEquation> and <InlineEquation ID="IEq4"> <InlineMediaObject> <ImageObject Color="BlackWhite" FileRef="11664_2025_11883_Article_IEq4.gif" Format="GIF" Height="20" Rendition="HTML" Resolution="72" Type="Linedraw" Width="130" /> </InlineMediaObject> <EquationSource Format="TEX">$C_Q (16.06 nH/\mu m)$</EquationSource> <EquationSource Format="MATHML"><math> <mrow> <msub> <mi>C</mi> <mi>Q</mi> </msub> <mrow> <mo stretchy="false">(</mo> <mn>16.06</mn> <mi>n</mi> <mi>H</mi> <mo stretchy="false">/</mo> <mi>μ</mi> <mi>m</mi> <mo stretchy="false">)</mo> </mrow> </mrow> </math></EquationSource> </InlineEquation> for unilateral edge Cl-passivated configurations, it emerges as the promising choice for metal interconnect. Our study also illustrated that these properties hold true for low bias voltages ranging up to 1 V. Finally, we also investigated the important circuit analysis metrics for these configurations, including delay <InlineEquation ID="IEq5"> <InlineMediaObject> <ImageObject Color="BlackWhite" FileRef="11664_2025_11883_Article_IEq5.gif" Format="GIF" Height="20" Rendition="HTML" Resolution="72" Type="Linedraw" Width="49" /> </InlineMediaObject> <EquationSource Format="TEX">$(\tau _{delay})$</EquationSource> <EquationSource Format="MATHML"><math> <mrow> <mo stretchy="false">(</mo> <msub> <mi>τ</mi> <mrow> <mi mathvariant="italic">delay</mi> </mrow> </msub> <mo stretchy="false">)</mo> </mrow> </math></EquationSource> </InlineEquation>, power (P), power delay product, and energy–delay product.</p>

Edge-Modified Zigzag Germanium Sulfide Nanoribbons for Interconnect Application

期刊论文
发表日期：

2025年4月1日

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Banti Yadav,
Pankaj Srivastava,
Varun Sharma

摘要

In the present work, germanium sulfide nanoribbons (GeSNR) were investigated for their potential as nanoscale interconnects using varied edge passivation techniques. Specifically, unilateral edge passivated and bilateral edge passivated zigzag GeSNR (ZGeSNR) were investigated under the influence of hydrogen, fluorine, and chlorine terminating elements. Owing to the conducting electronic nature of unilateral edge passivated ZGeSNR, these configurations were studied to examine crucial static and dynamical parameters including $R_Q, L_K, $ $R_{Q}, L_{K},$ and $C_Q$ $C_{Q}$ With the lowest values of $R_Q (12.91 K ohm), L_K (3.85 pF/cm),$ $R_{Q} (12.91 K o h m), L_{K} (3.85 p F / c m),$ and $C_Q (16.06 nH/\mu m)$ $C_{Q} (16.06 n H / μ m)$ for unilateral edge Cl-passivated configurations, it emerges as the promising choice for metal interconnect. Our study also illustrated that these properties hold true for low bias voltages ranging up to 1 V. Finally, we also investigated the important circuit analysis metrics for these configurations, including delay $(\tau _{delay})$ $(τ_{delay})$ , power (P), power delay product, and energy–delay product.