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<p>Achieving high <i>p</i>-type doping levels selectively in gallium nitride (GaN) is a nontrivial task. In this work, we present a method for diffusing Mg from a finite source into the GaN layer, creating a highly doped layer with Mg without the need for additional epitaxial growth. Secondary ion mass spectroscopy analysis confirmed a diffusion depth of approximately 50&#xa0;nm with a surface doping concentration of ~10<sup>22</sup>&#xa0;cm<sup>−3</sup>. Confirmation of activation was determined via electrical characterization. This activation of the <i>p</i>-GaN substrate demonstrated a 40% improvement in contact resistance, achieving a specific contact resistance of 7.5 × 10<sup>−4</sup>&#xa0;Ω∙cm<sup>2</sup>. This method offers a promising alternative to ion implantation, which requires high temperature annealing for lattice recovery. In contrast, our approach requires lower thermal energy, overcoming one of the major challenges in doping GaN.</p>

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Improving p-Type Doping in Gallium Nitride through Magnesium Diffusion

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  • 发表日期：

    2025年3月30日

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  • Haley E. Dishman,
  • Owen R. Meilander,
  • Mona A. Ebrish

摘要

Achieving high p-type doping levels selectively in gallium nitride (GaN) is a nontrivial task. In this work, we present a method for diffusing Mg from a finite source into the GaN layer, creating a highly doped layer with Mg without the need for additional epitaxial growth. Secondary ion mass spectroscopy analysis confirmed a diffusion depth of approximately 50 nm with a surface doping concentration of ~1022 cm−3. Confirmation of activation was determined via electrical characterization. This activation of the p-GaN substrate demonstrated a 40% improvement in contact resistance, achieving a specific contact resistance of 7.5 × 10−4 Ω∙cm2. This method offers a promising alternative to ion implantation, which requires high temperature annealing for lattice recovery. In contrast, our approach requires lower thermal energy, overcoming one of the major challenges in doping GaN.