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<p>GeO<sub>2</sub> doped TiO<sub>2</sub>-Nb<sub>2</sub>O<sub>5</sub>-Er<sub>2</sub>O<sub>3</sub>-SiO<sub>2</sub> varistor ceramics were fabricated by high-temperature sintering, and SEM results showed that GeO<sub>2</sub> doping promoted the grain size to grow from 9.1&#xa0;<i>µ</i>m to 11.89&#xa0;<i>µ</i>m and the relative density increased from 92.4% to 96.0% with the doping content increasing. EDS analysis indicated that the doping with GeO<sub>2</sub> induced more Er<sup>3+</sup> and Nb<sup>5+</sup> ions to dissolve into TiO<sub>2</sub> matrix, which might facilitate the defect reaction. As a result, GeO<sub>2</sub> doping reduced the breakdown voltage while increasing the nonlinear coefficient, and also improved the dielectric properties. The TiO<sub>2</sub> sample doped with 0.6&#xa0;mol.% GeO<sub>2</sub> was found to exhibit the best comprehensive electrical properties with a low breakdown voltage (<i>E</i><sub>1mA</sub>) of 2.50&#xa0;V/mm, an enhanced nonlinear coefficient (<i>α</i>) of 5.9, relative dielectric constant (<i>ε</i><sub>r</sub>) of 1.87&#xa0;×&#xa0;10<sup>5</sup> and tan <i>δ</i> of 0.272 (at a frequency of 1&#xa0;kHz).</p>

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Effect of GeO2 on the Electrical Properties of TiO2-Nb2O5-Er2O3-SiO2 Varistor

  • 期刊论文

  • 发表日期：

    2025年3月19日

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  • Xiaolong Huang,
  • Guangxu Pan,
  • Yong Pu,
  • Dachuan Zhu

摘要

GeO2 doped TiO2-Nb2O5-Er2O3-SiO2 varistor ceramics were fabricated by high-temperature sintering, and SEM results showed that GeO2 doping promoted the grain size to grow from 9.1 µm to 11.89 µm and the relative density increased from 92.4% to 96.0% with the doping content increasing. EDS analysis indicated that the doping with GeO2 induced more Er3+ and Nb5+ ions to dissolve into TiO2 matrix, which might facilitate the defect reaction. As a result, GeO2 doping reduced the breakdown voltage while increasing the nonlinear coefficient, and also improved the dielectric properties. The TiO2 sample doped with 0.6 mol.% GeO2 was found to exhibit the best comprehensive electrical properties with a low breakdown voltage (E1mA) of 2.50 V/mm, an enhanced nonlinear coefficient (α) of 5.9, relative dielectric constant (εr) of 1.87 × 105 and tan δ of 0.272 (at a frequency of 1 kHz).