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<p>This work investigated the temperature-dependent sensitivity of a two-dimensional nanohole-array PtSi/p-Si Schottky mid-infrared (MIR) plasmonic photodetector fabricated using Si-technology-compatible processes. Unlike conventional MIR photodetectors that require cooling systems to suppress noise, we demonstrated stable device sensitivity even at an elevated temperature of 60°C, with a lower rate of decrease in detectivity per temperature increase. The wavelength-dependent responsivity measurement exhibited no plasmonic shifts in the responsivity peak with temperature, confirming the stable optical properties of the device. Furthermore, multiple measurements verified the photodetector's reliability and robustness in its ON/OFF switching behavior and prolonged high-temperature exposure time with guaranteed reproducibility. This demonstrates the device's potential for long-term operation without sensitivity degradation at elevated temperatures. These findings offer significant insights into developing temperature-resilient MIR photodetectors for practical applications at room temperature and beyond.</p>

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Study on Temperature-Dependent Photoresponsivity and Stability of Mid-Infrared Photodetector Based on Si-Process-Compatible Plasmonic PtSi/p-Si Schottky Structure

  • 期刊论文

  • 发表日期：

    2025年3月17日

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  • Ashenafi Abadi Elyas,
  • Eslam Abubakr,
  • Daiji Noda,
  • Ryo Ohta,
  • Tetsuo Kan

摘要

This work investigated the temperature-dependent sensitivity of a two-dimensional nanohole-array PtSi/p-Si Schottky mid-infrared (MIR) plasmonic photodetector fabricated using Si-technology-compatible processes. Unlike conventional MIR photodetectors that require cooling systems to suppress noise, we demonstrated stable device sensitivity even at an elevated temperature of 60°C, with a lower rate of decrease in detectivity per temperature increase. The wavelength-dependent responsivity measurement exhibited no plasmonic shifts in the responsivity peak with temperature, confirming the stable optical properties of the device. Furthermore, multiple measurements verified the photodetector's reliability and robustness in its ON/OFF switching behavior and prolonged high-temperature exposure time with guaranteed reproducibility. This demonstrates the device's potential for long-term operation without sensitivity degradation at elevated temperatures. These findings offer significant insights into developing temperature-resilient MIR photodetectors for practical applications at room temperature and beyond.