Fabrication of NO2 Gas Sensor Based on α-In2Se3 Thin Films Grown Using PLD Technique
摘要
Two-dimensional materials offer high surface to volume ratios, high carrier mobility and thickness-dependent physical and chemical properties, and therefore have become a potential candidate to be used as a sensing platform. NO2 gas is a major pollutant and needs to be monitored. It has been reported that, being a layered material, α-In2Se3 offers excellent electronic, optical, and mechanical properties. Here, α-In2Se3 has been utilized for the detection of NO2 gas, where a significant sensing response of ~ 2.3 is observed towards 50 ppm of gas at an operating temperature of 60°C. Hence, the present work demonstrates that In2Se3 can be a potential candidate for NO2 gas-sensing application.