Dielectric and Piezoelectric Characteristics of Ba(Ti1−xSnx)O3 (BT-xBS) Electro-Ceramics Doped with Sn for 0.07 ≤ x ≤ 0.11
摘要
Solid-state reaction technology was used to produce the ferroelectric and piezoelectric characteristics of a Ba(Ti1−xSnx)O3 (BT-xBS) ceramic system with varying Sn concentrations. A pristine tetragonal crystal structure at room temperature was verified by x-ray diffraction analysis. Morphological studies have confirmed a compact microstructure with an average grain size ranging from 6 μm to 12 μm with decreasing Sn content. The dielectric measurement in relation to temperature, with x = 0.11 and the Curie temperature (Tc = 24°C), yielded the highest dielectric constant,