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<p>Sb<sub>2</sub>S<sub>3</sub>(antimony sulfide) has garnered considerable interest as a very promising option for the photovoltaic industry. This is attributed to its various advantageous properties, including its nontoxic nature, optimal bandgap, and high absorption coefficient. Despite its several advantages, the photovoltaic efficiency of Sb<sub>2</sub>S<sub>3</sub> is impeded by significant challenges, including interface recombination, an unoptimized Sb<sub>2</sub>S<sub>3</sub> layer, and suboptimal cell characteristics such as inadequate charge transport and inefficient carrier collection. To enhance the power conversion efficiency (PCE) of Sb<sub>2</sub>S<sub>3</sub>-based solar cells, a novel design has been proposed following extensive device simulations. In this paper, a dual electron transport material (ETM) structure composed of a front metal contact (FMC)/CdS/ZnO/Sb<sub>2</sub>S<sub>3</sub>/spiro-OMeTAD/back metal contact (BMC) has been introduced, wherein CdS and ZnO are utilized as ETM-1 and ETM-2, respectively, and spiro-OMeTAD serves as the hole transport material (HTM), while Sb<sub>2</sub>S<sub>3</sub> functions as the absorber material. A simulation was conducted to improve the various characteristics, including layer thickness of the absorber material, defect density, and doping density. As per the observations, a PCE of 20.8% with a short-circuit current (<i>J</i><sub>sc</sub>) of 19.4&#xa0;mA/cm, open-circuit voltage (<i>V</i><sub>oc</sub>) of 1.28&#xa0;V, and fill factor of 83.44% was achieved with this approach.</p>

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Unlocking the Potential of Sb2S3 Photovoltaics: A Simulation-based Exploration of a Dual ETM Architecture for High-Efficiency Solar Cells

  • 期刊论文

  • 发表日期：

    2025年2月19日

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  • Jaspinder Kaur,
  • Amita Parate,
  • Jyoteesh Malhotra,
  • Rikmantra Basu,
  • Ajay Kumar Sharma,
  • Jaya Madan,
  • Rahul Pandey

摘要

Sb2S3(antimony sulfide) has garnered considerable interest as a very promising option for the photovoltaic industry. This is attributed to its various advantageous properties, including its nontoxic nature, optimal bandgap, and high absorption coefficient. Despite its several advantages, the photovoltaic efficiency of Sb2S3 is impeded by significant challenges, including interface recombination, an unoptimized Sb2S3 layer, and suboptimal cell characteristics such as inadequate charge transport and inefficient carrier collection. To enhance the power conversion efficiency (PCE) of Sb2S3-based solar cells, a novel design has been proposed following extensive device simulations. In this paper, a dual electron transport material (ETM) structure composed of a front metal contact (FMC)/CdS/ZnO/Sb2S3/spiro-OMeTAD/back metal contact (BMC) has been introduced, wherein CdS and ZnO are utilized as ETM-1 and ETM-2, respectively, and spiro-OMeTAD serves as the hole transport material (HTM), while Sb2S3 functions as the absorber material. A simulation was conducted to improve the various characteristics, including layer thickness of the absorber material, defect density, and doping density. As per the observations, a PCE of 20.8% with a short-circuit current (Jsc) of 19.4 mA/cm, open-circuit voltage (Voc) of 1.28 V, and fill factor of 83.44% was achieved with this approach.