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<p>Dark current under different doping concentrations and the optical performance at different temperatures for mid-wave infrared (MWIR) type-II superlattice InAs/GaSb PIN and PBIN photodetectors were modeled and simulated in this work. Initially, by analyzing different dark current components, it was deduced that the reduction in the dark current of the PBIN detector was due to the tunneling current decrease caused by the reduced electric field in the absorber region, as well as the diffusion current decrease caused by the blocking effect of the wide-bandgap barrier layer on majority carriers. Secondly, the temperature dependence on the optical performance of the PIN and PBIN detectors has been theoretically calculated. According to the simulation results, a noticeable improvement in the detectivity (<i>D*</i>) of the PBIN structure detector is observed in comparison to the PIN structure, primarily attributed to the reduction in dark current. The computational results indicate that the quantum efficiency (QE) at 3.1&#xa0;μm for PIN and PBIN detectors is 50% and 43% (at <i>T</i> = 180&#xa0;K and <i>V</i> = −0.3&#xa0;V), respectively, with the peak <i>D*</i> at 3.1&#xa0;μm being 3.95 × 10<sup>9</sup>&#xa0;cm&#xa0;Hz<sup>1/2</sup>W<sup>−1</sup> and 4.45 × 10<sup>9</sup>&#xa0;cm&#xa0;Hz<sup>1/2</sup>W<sup>−1</sup>, respectively. Furthermore, the results showed that an excessively high value of valence band offset, above 120&#xa0;meV, significantly degraded the optical performance of the device, which can also provide a reference for the design and fabrication of the devices.</p>

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Modeling and Simulation of MWIR InAs/GaSb Superlattice PIN and PBIN Detectors

  • 期刊论文

  • 发表日期：

    2025年2月5日

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  • Fan Tang,
  • Weiqiang Chen,
  • Lidan Lu,
  • Jixing Yang,
  • Bingfeng Liu,
  • Jing Yu,
  • Hong Wang,
  • Lianqing Zhu

摘要

Dark current under different doping concentrations and the optical performance at different temperatures for mid-wave infrared (MWIR) type-II superlattice InAs/GaSb PIN and PBIN photodetectors were modeled and simulated in this work. Initially, by analyzing different dark current components, it was deduced that the reduction in the dark current of the PBIN detector was due to the tunneling current decrease caused by the reduced electric field in the absorber region, as well as the diffusion current decrease caused by the blocking effect of the wide-bandgap barrier layer on majority carriers. Secondly, the temperature dependence on the optical performance of the PIN and PBIN detectors has been theoretically calculated. According to the simulation results, a noticeable improvement in the detectivity (D*) of the PBIN structure detector is observed in comparison to the PIN structure, primarily attributed to the reduction in dark current. The computational results indicate that the quantum efficiency (QE) at 3.1 μm for PIN and PBIN detectors is 50% and 43% (at T = 180 K and V = −0.3 V), respectively, with the peak D* at 3.1 μm being 3.95 × 109 cm Hz1/2W−1 and 4.45 × 109 cm Hz1/2W−1, respectively. Furthermore, the results showed that an excessively high value of valence band offset, above 120 meV, significantly degraded the optical performance of the device, which can also provide a reference for the design and fabrication of the devices.