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<p>This study investigates carrier activation in boron (B)-doped monocrystalline (single-Si) and polycrystalline (poly-Si) silicon substrates, specifically within end-of-range (EOR) defects and grain boundaries. Secondary-ion mass spectrometry (SIMS), atom-probe tomography (APT), and differential Hall effect metrology (DHEM) were utilized to measure B concentration and carrier activation. Carrier activation was calculated by dividing the carrier concentration, derived from DHEM, by the B concentration, measured via SIMS and APT. Because of its broad probed region (~100&#xa0;μm), SIMS cannot distinguish B localized in specific EOR defects or grain boundaries, while APT, with sub-nanometer resolution, accurately maps B distribution within EOR defects, grain boundaries, and grains. Using DHEM and SIMS, carrier activation was determined as 10.2% in single-Si (including both EOR defect and non-defect grain regions) and 14.5% in poly-Si, encompassing grain boundaries. APT 3D imaging showed significantly elevated B concentrations exclusively in the EOR defect region of single-Si (~1.96 × 10<sup>21</sup> atoms/cm<sup>3</sup>) and within poly-Si grain boundaries (~1.74 × 10<sup>21</sup> atoms/cm<sup>3</sup>), with respective carrier activation of 3.5 and 4.7%. These results demonstrate substantial B segregation within EOR defects and grain boundaries, contributing to reduced carrier activation.</p>

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Carrier Activation at End-of-Range (EOR) Defects and Grain Boundaries in Boron-Doped Silicon

  • 期刊论文

  • 发表日期：

    2025年1月14日

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  • Yi-Yao Li,
  • Yu-Chen Yang,
  • Tung-Huan Chou,
  • Yu-Lin Huang,
  • Chia-He Chang,
  • Ya-Lan Hsu,
  • Kun-Lin Lin

摘要

This study investigates carrier activation in boron (B)-doped monocrystalline (single-Si) and polycrystalline (poly-Si) silicon substrates, specifically within end-of-range (EOR) defects and grain boundaries. Secondary-ion mass spectrometry (SIMS), atom-probe tomography (APT), and differential Hall effect metrology (DHEM) were utilized to measure B concentration and carrier activation. Carrier activation was calculated by dividing the carrier concentration, derived from DHEM, by the B concentration, measured via SIMS and APT. Because of its broad probed region (~100 μm), SIMS cannot distinguish B localized in specific EOR defects or grain boundaries, while APT, with sub-nanometer resolution, accurately maps B distribution within EOR defects, grain boundaries, and grains. Using DHEM and SIMS, carrier activation was determined as 10.2% in single-Si (including both EOR defect and non-defect grain regions) and 14.5% in poly-Si, encompassing grain boundaries. APT 3D imaging showed significantly elevated B concentrations exclusively in the EOR defect region of single-Si (~1.96 × 1021 atoms/cm3) and within poly-Si grain boundaries (~1.74 × 1021 atoms/cm3), with respective carrier activation of 3.5 and 4.7%. These results demonstrate substantial B segregation within EOR defects and grain boundaries, contributing to reduced carrier activation.