<p>A novel reverse-conducting lateral insulated gate bipolar transistor (RC-LIGBT) with an integrated separate designed (ISD) free-wheeling-diode (FWD), referred to as an ISD-LIGBT, is proposed and demonstrated using the TCAD [Technology Computer-Aided Design] SENTAURUS. The FWD of this structure is separated from the normal LIGBT by an oxide layer, so the proposed RC-LIGBTs do not have the snapback effect like the conventional RC-LIGBT. Therefore, with the introduction of the reverse-conducting part, the forward performance of the device is not affected. Because of the separate designed FWD of the proposed LIGBT, the device can achieve different reverse performance through the FWD design, such as PIN, MPS, and MOS channel diodes, which have different conductivity properties. When the device is in the reverse conduction state, the reverse current of the LIGBT with PIN FWD is provided by the PIN diode, and the reverse current of the LIGBT with MPS is provided by the MPS diode. Because of the excellent recovery ability of the MPS compared to the PIN, the reverse recovery charge (<InlineEquation ID="IEq1"> <InlineMediaObject> <ImageObject Color="BlackWhite" FileRef="11664_2024_11704_Article_IEq1.gif" Format="GIF" Height="18" Rendition="HTML" Resolution="72" Type="Linedraw" Width="24" /> </InlineMediaObject> <EquationSource Format="TEX">$\textit{Q}_\textrm{rr}$</EquationSource> <EquationSource Format="MATHML"><math> <msub> <mi mathvariant="italic">Q</mi> <mtext>rr</mtext> </msub> </math></EquationSource> </InlineEquation>) is decreased by 45.43%. The reverse current of the LIGBT with the MOS channel diode is provided by the MOS channel diode, and the reverse recovery charge (<InlineEquation ID="IEq2"> <InlineMediaObject> <ImageObject Color="BlackWhite" FileRef="11664_2024_11704_Article_IEq2.gif" Format="GIF" Height="18" Rendition="HTML" Resolution="72" Type="Linedraw" Width="24" /> </InlineMediaObject> <EquationSource Format="TEX">$\textit{Q}_\textrm{rr}$</EquationSource> <EquationSource Format="MATHML"><math> <msub> <mi mathvariant="italic">Q</mi> <mtext>rr</mtext> </msub> </math></EquationSource> </InlineEquation>), time (<InlineEquation ID="IEq3"> <InlineMediaObject> <ImageObject Color="BlackWhite" FileRef="11664_2024_11704_Article_IEq3.gif" Format="GIF" Height="16" Rendition="HTML" Resolution="72" Type="Linedraw" Width="22" /> </InlineMediaObject> <EquationSource Format="TEX">$\textit{T}_\textrm{rr}$</EquationSource> <EquationSource Format="MATHML"><math> <msub> <mi mathvariant="italic">T</mi> <mtext>rr</mtext> </msub> </math></EquationSource> </InlineEquation>), and peak current (<InlineEquation ID="IEq4"> <InlineMediaObject> <ImageObject Color="BlackWhite" FileRef="11664_2024_11704_Article_IEq4.gif" Format="GIF" Height="16" Rendition="HTML" Resolution="72" Type="Linedraw" Width="27" /> </InlineMediaObject> <EquationSource Format="TEX">$\textit{I}_\textrm{rrm}$</EquationSource> <EquationSource Format="MATHML"><math> <msub> <mi mathvariant="italic">I</mi> <mtext>rrm</mtext> </msub> </math></EquationSource> </InlineEquation>) are effectively reduced by the MOS channel diode at the reverse freewheeling state; compared to the PIN-FWD, the <InlineEquation ID="IEq5"> <InlineMediaObject> <ImageObject Color="BlackWhite" FileRef="11664_2024_11704_Article_IEq5.gif" Format="GIF" Height="18" Rendition="HTML" Resolution="72" Type="Linedraw" Width="24" /> </InlineMediaObject> <EquationSource Format="TEX">$\textit{Q}_\textrm{rr}$</EquationSource> <EquationSource Format="MATHML"><math> <msub> <mi mathvariant="italic">Q</mi> <mtext>rr</mtext> </msub> </math></EquationSource> </InlineEquation> is decreased by 62.49%. The ISD also causes a reduction in energy loss during the turn-on and turn-off of the diode part. The structure proposed in this paper thus allows different FWDs to be used in different situations.</p>

A Snapback-Free RC-LIGBT Integrating a Separate Designed FWD

期刊论文
发表日期：

2025年1月17日

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Xiangwei Zeng,
Weizhong Chen,
Ao Wu,
Zikai Wei

摘要

A novel reverse-conducting lateral insulated gate bipolar transistor (RC-LIGBT) with an integrated separate designed (ISD) free-wheeling-diode (FWD), referred to as an ISD-LIGBT, is proposed and demonstrated using the TCAD [Technology Computer-Aided Design] SENTAURUS. The FWD of this structure is separated from the normal LIGBT by an oxide layer, so the proposed RC-LIGBTs do not have the snapback effect like the conventional RC-LIGBT. Therefore, with the introduction of the reverse-conducting part, the forward performance of the device is not affected. Because of the separate designed FWD of the proposed LIGBT, the device can achieve different reverse performance through the FWD design, such as PIN, MPS, and MOS channel diodes, which have different conductivity properties. When the device is in the reverse conduction state, the reverse current of the LIGBT with PIN FWD is provided by the PIN diode, and the reverse current of the LIGBT with MPS is provided by the MPS diode. Because of the excellent recovery ability of the MPS compared to the PIN, the reverse recovery charge ( $\textit{Q}_\textrm{rr}$ $Q_{rr}$ ) is decreased by 45.43%. The reverse current of the LIGBT with the MOS channel diode is provided by the MOS channel diode, and the reverse recovery charge ( $\textit{Q}_\textrm{rr}$ $Q_{rr}$ ), time ( $\textit{T}_\textrm{rr}$ $T_{rr}$ ), and peak current ( $\textit{I}_\textrm{rrm}$ $I_{rrm}$ ) are effectively reduced by the MOS channel diode at the reverse freewheeling state; compared to the PIN-FWD, the $\textit{Q}_\textrm{rr}$ $Q_{rr}$ is decreased by 62.49%. The ISD also causes a reduction in energy loss during the turn-on and turn-off of the diode part. The structure proposed in this paper thus allows different FWDs to be used in different situations.