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<p>We report the fabrication process of a granular-Ni(100&#xa0;nm)/MgO(5&#xa0;nm)/Ni(300&#xa0;nm)-based device structure exhibiting a distinctive behavior of oscillatory tunneling magnetoresistance (TMR) with increasing magnetic field (<i>H</i>) at room temperature. The Ni layers were deposited by RF-magnetron sputtering, while the MgO layer was deposited by <i>e</i>-beam evaporation. The TMR of the device started oscillating between&#xa0;+ve and −ve values with increasing <i>H</i> applied parallel to the current flow direction (above 350 Gauss). This oscillatory behavior almost disappeared when <i>H</i> was applied perpendicular to the current flow direction. The observed TMR characteristics of the present devices with increasing <i>H</i> indicate a quantum mechanical resonance behavior of the two-dimensional electron systems in the deposited layers, and are highly attractive for state-of-the-art applications in broad domains of spintronics, from biosensors to studying defects in embedded systems.</p>

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Fabrication of Granular-Ni/MgO/Ni-Based TMR Devices Exhibiting Oscillatory Tunneling Magnetoresistance with Increasing Magnetic Field at Room Temperature

  • 期刊论文

  • 发表日期：

    2025年1月2日

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  • Sumit Pokhriyal,
  • Somnath Biswas

摘要

We report the fabrication process of a granular-Ni(100 nm)/MgO(5 nm)/Ni(300 nm)-based device structure exhibiting a distinctive behavior of oscillatory tunneling magnetoresistance (TMR) with increasing magnetic field (H) at room temperature. The Ni layers were deposited by RF-magnetron sputtering, while the MgO layer was deposited by e-beam evaporation. The TMR of the device started oscillating between +ve and −ve values with increasing H applied parallel to the current flow direction (above 350 Gauss). This oscillatory behavior almost disappeared when H was applied perpendicular to the current flow direction. The observed TMR characteristics of the present devices with increasing H indicate a quantum mechanical resonance behavior of the two-dimensional electron systems in the deposited layers, and are highly attractive for state-of-the-art applications in broad domains of spintronics, from biosensors to studying defects in embedded systems.