Comparative Study of AlGaN/InGaN/β-Ga2O3 and InAlN/InGaN/β-Ga2O3 HEMTs for Enhanced RF Linearity

AlGaN/InGaN high electron mobility transistors (HEMTs) on β-Ga₂O₃ and InAlN/InGaN on β-Ga₂O₃ are proposed for high linear radio frequency (RF) applications. In comparison to an AlGaN/InGaN HEMT, an InAlN/InGaN HEMT exhibits excellent DC (direct current) and RF performance. The proposed InAlN/InGaN on β-Ga₂O₃ substrate HEMT exhibited 5.9 A/mm of I_DS, 0.71 S/mm of g_m with gate voltage swing (GVS) of 7.753 V, V_BR of 73 V, f_T/f_max of 290/364 GHz, and OIP3 (output third-order intercept point) of 38.6 dB, whereas AlGaN/InGaN on β-Ga₂O₃ substrate HEMT exhibited 3.75 A/mm of I_DS, 0.68 S/mm of g_m with GVS of 6 V, V_BR of 85 V, f_T/f_max of 268/320 GHz, and OIP3 of 41.2 dB. These findings show that InGaN channel-based HEMTs on β-Ga₂O₃ substrate are viable platforms for future high linear RF applications.