Scholarlink

<p>To explore the effect of a TiO<sub>2</sub>-surfactant (Brij 58) insulator as an interfacial layer on the electrical properties of a metal–semiconductor (MS) structure, a Au/TiO<sub>2</sub>-surfactant/n-Si (MIS) structure was created on an n-Si wafer. The spin coating method was used to deposit a TiO<sub>2</sub> layer on the Si wafer. The electrical performance of the MIS structure is of great importance, and its study at forward and reverse biases requires the use of the <i>I</i>–<i>V</i> data (from −4.5&#xa0;V to +4.5&#xa0;V). The values of the reverse saturation current (<i>I</i><sub>0</sub>), series resistance (<i>R</i><sub>s</sub>), shunt resistance (<i>R</i><sub>sh</sub>), and rectification ratio (RR) are this structure’s essential electrical characteristics that are calculated and compared with those of the MS structure. By measuring the energy dependence at forward bias, the density distribution of the surface states can be ascertained. The current conduction mechanisms are also determined. Moreover, the dielectric features of the MIS structure are extensively studied by calculating the values of <i>ε</i>′, <i>ε</i>″, tanδ, <i>R</i><sub>s</sub>, and <i>σ</i> over a range of bias voltages (0.25–4&#xa0;V) and frequencies (1&#xa0;kHz–1&#xa0;MHz) using <i>C</i>/(<i>G</i>/<i>ω</i>)–<i>V</i> and <i>C</i>/(<i>G</i>/<i>ω</i>)–<i>f</i> measurements. The <i>C</i><sup>−2</sup>–<i>V</i> plot of the structure is examined at a frequency range of 1&#xa0;kHz–1&#xa0;MHz. The results of these measurements are discussed in detail, providing insight into the changes in the impedance properties of the MIS device.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Effect of TiO2-Surfactant Interface on the Electrical and Dielectric Properties of a Metal–Insulator–Semiconductor (MIS) Structure

  • 期刊论文

  • 发表日期：

    2025年1月3日

查看全文
  • Yashar Azizian-Kalandaragh,
  • Halil Ibrahim Efkere,
  • Ali Barkhordari,
  • Benedetta Marmiroli,
  • Barbara Sartori,
  • Süleyman Özçelik,
  • Gholam Reza Pirgholi-Givi,
  • Şemsettin Altındal

摘要

To explore the effect of a TiO2-surfactant (Brij 58) insulator as an interfacial layer on the electrical properties of a metal–semiconductor (MS) structure, a Au/TiO2-surfactant/n-Si (MIS) structure was created on an n-Si wafer. The spin coating method was used to deposit a TiO2 layer on the Si wafer. The electrical performance of the MIS structure is of great importance, and its study at forward and reverse biases requires the use of the I–V data (from −4.5 V to +4.5 V). The values of the reverse saturation current (I0), series resistance (Rs), shunt resistance (Rsh), and rectification ratio (RR) are this structure’s essential electrical characteristics that are calculated and compared with those of the MS structure. By measuring the energy dependence at forward bias, the density distribution of the surface states can be ascertained. The current conduction mechanisms are also determined. Moreover, the dielectric features of the MIS structure are extensively studied by calculating the values of ε′, ε″, tanδ, Rs, and σ over a range of bias voltages (0.25–4 V) and frequencies (1 kHz–1 MHz) using C/(G/ω)–V and C/(G/ω)–f measurements. The C−2–V plot of the structure is examined at a frequency range of 1 kHz–1 MHz. The results of these measurements are discussed in detail, providing insight into the changes in the impedance properties of the MIS device.