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<p>The crystal growth rate has a significant impact on the quality of crystals grown with the traveling heater method (THM) and the vertical Bridgman method (VBM). The THM and VBM growth processes of GaInSb crystals were simulated with the transient numerical method, and the effects of crystal growth rate on the temperature field in the crucible domain and the convection field in the melt during the crystal growth process were investigated, especially the effects on the growth interface shape, the axial temperature gradient inside the crystal, and the melt flow velocity. The mushy zone in the front of growth interface for the ternary compound crystals like GaInSb has almost always been ignored in the previous numerical simulation works. This work not only considers the mushy zone, but also compares the effects of growth rate and the mushy zone on both THM and VBM crystal growth processes.</p>

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Effects of Crystal Growth Rate on Convection and Heat Transfer During GaInSb THM and VBM Crystal Growths Considering the Mushy Zone

  • 期刊论文

  • 发表日期：

    2025年1月10日

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  • Pei Wang,
  • Bowen Wang,
  • Leran Zhao,
  • Ming Liu,
  • Jian Liu,
  • Lifang Nie,
  • Juncheng Liu

摘要

The crystal growth rate has a significant impact on the quality of crystals grown with the traveling heater method (THM) and the vertical Bridgman method (VBM). The THM and VBM growth processes of GaInSb crystals were simulated with the transient numerical method, and the effects of crystal growth rate on the temperature field in the crucible domain and the convection field in the melt during the crystal growth process were investigated, especially the effects on the growth interface shape, the axial temperature gradient inside the crystal, and the melt flow velocity. The mushy zone in the front of growth interface for the ternary compound crystals like GaInSb has almost always been ignored in the previous numerical simulation works. This work not only considers the mushy zone, but also compares the effects of growth rate and the mushy zone on both THM and VBM crystal growth processes.