The electrostatic behavior of a hydrogen sulfide (H \(_2\) S)-based double-gate (DG) single-electron transistor (SET) for the charge detection of toxic H \(_2\) S gas has been investigated and its potential for switching applications with different orientations of H \(_2\) S quantum dot explored. The electronic properties of the SET operating in the coulomb blockage region have been analyzed using advanced modeling techniques like density functional theory (DFT) and non-equilibrium Green’s function formalism, implemented in the QuantumWise-ATK. Through simulations, the charging energies of H \(_2\) S molecules within the SET environment have been calculated, and the plot of total energy with gate voltage developed, which serves as a basis to generate the charge stability diagram. This diagram illustrates the nature of electron conduction in different charge states, which act as unique electronic fingerprints for the identification of H \(_2\) S gas in different orientations. Moreover, it is observed that operating this SET model under negative gate bias is more energetically efficient than under positive bias.
