A theoretical investigation is conducted on semiconducting MXenes \(\hbox {M}_{2}\) COS (M = Zr, Hf) using both density functional theory and the Boltzmann transport equation. The findings suggest that optimization of thermoelectric properties is more effective through n-type doping than p-type doping. At 300 K, n-type doping yields a power factor of 4.3 \(\times \) 10 \(^{3}\) \(\mu \) W/ \(\hbox {mK}^{2}\) for Zr \({_2}\) COS and 4.5 \(\times \) 10 \(^{3}\) \(\mu \) W/ \(\hbox {mK}^{2}\) for Hf \({_2}\) COS. Furthermore, lattice thermal conductivity ( \(\kappa _{l}\) ) values of 21.8 W/m K and 27 W/m K are obtained for Zr \({_2}\) COS and Hf \({_2}\) COS, respectively, at 300 K. These values are lower than the lattice thermal conductivity of oxygen-functionalized MXenes \(\hbox {Zr}_2\hbox {CO}_2\) (61.9 W/m K) and \(\hbox {Hf}_2\hbox {CO}_2\) (86.3 W/m K). The projected thermoelectric figure of merit value can potentially reach 0.27 and 0.23 at 700 K for n-type Zr \({_2}\) COS and Hf \({_2}\) COS, respectively. These findings reveal the promising application prospects for n-type Zr \({_2}\) COS and Hf \({_2}\) COS in the field of thermoelectric materials.