Design and Comparative Analysis of Ferroelectric Nanowire with Dielectric HfO₂ and Al₂O₃ for Low-Power Applications

This paper reports the design of ferroelectric nanowires using HfO₂ and Al₂O₃. Ferroelectric nanowire transistors have drawn considerable attention recently because of their potential for use in low-power devices and non-volatile memory systems. In this work, the drain current, acceptor concentrations, and electric field are analyzed. The results obtained for the proposed device structure highlight the relevance of Al₂O₃- and HfO₂-based nanowires as potential materials for the development of cutting-edge nanotechnology and materials science advancements. The proposed device structure has I_ON = 3.8 × 10⁻⁵ using HfO₂ and I_ON = 3.48 × 10⁻⁴ using Al₂O₃. The significant improvements in the results make ferroelectric nanowire interesting for the scientific and research community working in this area.