Analysis of III–V Heterojunction TFET for High-Frequency Analog Applications

This research exclusively presents a short-channel III–V heterojunction tunnel field-effect transistor (TFET) featuring a high-κ gate dielectric. The study includes a comprehensive comparison of direct-current (DC) performance, analog/radio-frequency (RF) characteristics, and linearity distortion analysis with a Ge-source-based TFET. To optimize the device behavior, heterojunctions based on InGaAs and SiGe materials are considered over the Ge-source and Si-source TFET to improve the tunneling mechanism. The transfer characteristics of the proposed device have been acquired and elucidated using different device parameters. The reported device structure achieves \(I_{\text{ON}}\) $I_{\text{ON}}$ / \(I_{\text{OFF}} = 1.4 \times 10^{13}\) $I_{\text{OFF}}=1.4\times {10}^{13}$ and subthreshold swing of 12.3 mV/decade. Analog and RF characterization of the proposed device involves in-depth analysis of various parameters such as transconductance, parasitic capacitance, cutoff frequency, and other linearity distortion parameters. These specific aspects are thoroughly illustrated to provide a comprehensive understanding of the device performance in analog and RF applications. The findings also indicate that the heterojunction TFET device showcases reduced transconductance derivatives, decreased intermodulation distortion-3, and enhanced voltage intercept points. There is an increase in the input intercept point-3, indicating improved linearity performance and a reduction in distortion for the device. It is thus concluded that the heterojunction TFET is a viable choice for applications requiring low power, high speed, and stable performance.