Investigating Viability of Split-Stepped Gate Field Plate Design on Ga₂O₃ MOSFET for High Power Applications

A split-stepped gate field plate design has been incorporated on a gallium oxide (Ga₂O₃) metal-oxide semiconductor field-effect transistor (MOSFET). The aim of the present work is to unfold the potential of Ga₂O₃ MOSFET by enhancing its breakdown limits and also to overcome the challenge of simultaneous improvement in power as well as radio frequency (RF) metrics. An extensive simulation study focusing on analog and RF metrics has been carried out using technology computer-aided design simulations of the proposed device in a calibrated environment, and a comparative analysis of split stepped gate field plate design, shorted stepped gate field plate design, and conventional Ga₂O₃ MOSFET design has also been performed. The results highlight the superiority of the proposed device, and a substantial enhancement in breakdown voltage (i.e., 106.36% relative increase) and power figure-of-merit (i.e., 282.70% relative increase) has been demonstrated.