Optimization of Non-fullerene Organic Photovoltaics Through Interface Engineering with Graphene Oxide: A Numerical Simulation
摘要
In bulk-heterojunction (BHJ) organic photovoltaics (OPVs), non-fullerene acceptors (NFAs) have lately surpassed their fullerene counterparts in photovoltaic performance. This progress in NFA OPVs may encourage the exploration of varied OPV device architectures, either deviating from or expanding upon the fundamental BHJ structure. This study employs numerical simulations on PBDB-T:NCBDT OPVs using graphene oxide (GO) as the hole transport layer (HTL) to examine the influence of thickness, defect density, and interface defects on device performance. Following optimization, the device exhibits short-circuit current (JSC) of 27.92 mA cm−2, open-circuit voltage (VOC) of 1.08 V, fill factor (FF) of 72.57%, and power conversion efficiency (PCE) of 21.84%. These findings support the further development of NFA-OPVs employing GO as the HTL.