Electron–Phonon Coupling and Carrier Relaxation Times in Gallium Antimonide Under Strain

Gallium antimonide (GaSb) is a III-V semiconductor of technological interest for low-power, high-mobility field-effect transistors, as well as for mid-wave infrared detectors. In such devices, GaSb interfaces with other III–V semiconductors with different lattice constants that can induce strain in the GaSb layers. Two dominant limiting factors in hot carrier relaxation are the intra-valley and the inter-valley electron–phonon (e-ph) scattering. In GaSb, these are sensitive to the \(\Gamma \) $\mathrm{\Gamma }$ –L energy ordering, which depend intimately on the strain. Here, we report ab initio calculations of electronic structure, phonon dispersion, e-ph scattering and relaxation times for GaSb as a function of strain. As observed previously for other group IV and III-V semiconductors, our results show strong anisotropy, a strong contribution from LO phonons, and the need to go beyond the deformation potential scattering. For GaSb, the main finding is that a compressive strain between 0.4% and 0.6% converts GaSb from a direct-bandgap semiconductor to an indirect-bandgap semiconductor, with dramatic changes in the competing scattering rates and carrier relaxation times.