<p>High-purity tellurium is a key raw material widely used in high-tech fields such as optoelectronics and infrared detection. Therefore, the deep purification of tellurium is of great significance. In this study, high-purity tellurium was prepared using a combination of computer-assisted and experimental methods. First, the theoretical distribution of impurities was calculated based on the Spim model. Next, experimental studies under varying conditions, such as melting zone moving speed and number of zone refining passes, were conducted. Graphical approximation and linear regression were applied to determine the equilibrium distribution coefficients of the impurities. The experimental results showed that after 12 passes of zone refining, the sample purity could reach 7N8, with an impurity removal ratio exceeding 90&#xa0;pct. Increasing the number of zone refining passes had the most significant effect on the removal of Cu and Se, followed by S and Si. It was demonstrated that H₂ could effectively reduce the effective distribution coefficients of Se/S impurities, and the equilibrium distribution coefficients of Se, Si, and S were calculated to be 0.16, 0.26, and 0.28, respectively. Additionally, based on the BPS model, the ratio of the diffusion layer thickness to the diffusion coefficient (<i>δ</i>/<i>D</i>) was determined. This ratio is crucial for predicting the effective distribution coefficient of impurities, as well as for calculating the diffusion layer thickness and the diffusion coefficient within the melting zone.</p>