Preparation of Silicon Monoxide by Electric Thermal Coupling Vapor Deposition Process

The purpose of this study was to prepare amorphous silicon monoxide (SiO) at a low-temperature using a thermoelectric field coupling method. The sample was heated directly by an electric current using silicon (Si) and silicon dioxide (SiO₂) as raw materials. Experimental conditions included a stoichiometric mass ratio of raw materials, 10–13 pct conductive graphite doping, an external electric field of 600 V/cm, a current density of 10.57 A/cm², and a furnace temperature range of 300–480 °C in a vacuum environment. A reddish-brown gas condensate with a Si:SiO₂ atomic fraction ratio of 49.86:50.14 was successfully prepared. The real-time voltage measurements divided the process into four stages. Results showed this method prepared amorphous SiO powder at a lower temperature, reducing furnace temperature by nearly 1000 °C compared to traditional methods, which is significant for lowering crucible temperatures in industrial silicon monoxide production.