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Abstract <p>Fe28Al and Fe46Al alloys were anodized in a boric-sulfuric aqueous electrolyte (5–15&#xa0;V, 300–1200&#xa0;seconds) to produce semiconductive nanoporous oxide layers. Microstructural analysis of the base materials confirmed the presence of Fe(Al) solid solution phase in both alloys and lower grain size in Fe28Al alloy. Anodization of both materials resulted in the formation of homogeneous films only on the Fe46Al alloy. The characterization (SEM/EDS and XPS) results of the selected oxide layers on Fe46 alloy showed a proportional content increase of Fe and Al species with the applied voltage. These films were further sealed in an aqueous CuSO<sub>4</sub> solution, homogeneously incorporating Cu (~&#xa0;3 to 5 at. pct) on their surfaces. Annealing post-treatment of selected and Cu-sealed oxide layers at 900&#xa0;°C led to Fe<sub>3</sub>O<sub>4</sub>, α-Fe<sub>2</sub>O<sub>3</sub>, FeAlO<sub>3</sub>, FeAl<sub>2</sub>O<sub>4</sub>, and γ-Al<sub>2</sub>O<sub>3</sub> formation, with additional CuO and CuFe<sub>2</sub>O<sub>4</sub> phases in Cu-sealed films. The band gap values (UV–Vis reflectance spectroscopy) of as-anodized films decreased by 0.05 to 0.15&#xa0;eV after annealing due to the slightly higher content of conductive iron oxides over insulating Al oxides. Interestingly, although Cu sealing had a minimal impact on the band gap values, annealed Cu-sealed films.</p> Graphical Abstract <p></p>

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Anodization of FeAl Alloy in Boric-Sulfuric Acid: Band Gap Tuning Via Copper Doping and Annealing

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年7月22日

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  • Rubén del Olmo,
  • Marcin Pisarek,
  • Tomasz Durejko,
  • Marta Michalska-Domańska

摘要

Abstract

Fe28Al and Fe46Al alloys were anodized in a boric-sulfuric aqueous electrolyte (5–15 V, 300–1200 seconds) to produce semiconductive nanoporous oxide layers. Microstructural analysis of the base materials confirmed the presence of Fe(Al) solid solution phase in both alloys and lower grain size in Fe28Al alloy. Anodization of both materials resulted in the formation of homogeneous films only on the Fe46Al alloy. The characterization (SEM/EDS and XPS) results of the selected oxide layers on Fe46 alloy showed a proportional content increase of Fe and Al species with the applied voltage. These films were further sealed in an aqueous CuSO4 solution, homogeneously incorporating Cu (~ 3 to 5 at. pct) on their surfaces. Annealing post-treatment of selected and Cu-sealed oxide layers at 900 °C led to Fe3O4, α-Fe2O3, FeAlO3, FeAl2O4, and γ-Al2O3 formation, with additional CuO and CuFe2O4 phases in Cu-sealed films. The band gap values (UV–Vis reflectance spectroscopy) of as-anodized films decreased by 0.05 to 0.15 eV after annealing due to the slightly higher content of conductive iron oxides over insulating Al oxides. Interestingly, although Cu sealing had a minimal impact on the band gap values, annealed Cu-sealed films.

Graphical Abstract