<p>The synthesis of pure and Ho-doped ZnO nanoparticles was achieved via co-precipitation synthesis route. The morphological and structural properties of pure and Ho-doped ZnO were investigated using FESEM and XRD techniques respectively. Decreased intensity and no extra peaks of XRD pattern confirms the successful incorporation of Ho³⁺ ions into the ZnO lattice. FESEM shows hexagonal box and sheet type morphology which explains the enhanced piezo-response of Ho-doped ZnO. Current-Voltage (I-V) characteristics justify the semiconductor behaviour of both doped and undoped ZnO. Frequency dependent dielectric experiments were carried out at various temperatures to study the behaviour of dielectric constant and dielectric loss. Doping Ho induces ferroelectricity in pure ZnO with remnant polarization (P_r = 0.091µC/cm²) and coercive field (E_c = 5.862&#xa0;kV/cm) and enhanced from d₃₃ ~ 12.4 pm/V (pure ZnO) to d₃₃ ~ 228 pm/V (Ho-doped ZnO). Ho-doped ZnO nanoparticles have much higher piezoelectric coefficient (d₃₃ ~ 228 pm/V) than pure ZnO (d₃₃ ~ 12.4 pm/V). The fabricated PVDF-HFP based Ho-doped ZnO nanogenerator delivered an output voltage of around ~ 35&#xa0;V in response to a tapping force of around 0.02 kgf, making it a viable alternative for pressure sensors.</p> Graphical Abstract <p></p>